IPP069N20NM6AKSA1 vs IRFB3207ZPBF Vergleich
Detaillierter Direktvergleich von IPP069N20NM6AKSA1 von Infineon und IRFB3207ZPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPP069N20NM6AKSA1 - 200V 136A OptiMOS 6 N-Channel MOSFET | Infineon
IPP069N20NM6AKSA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IPP069N20NM6AKSA1 | IRFB3207ZPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $4,10 | $1,62 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 200 V | 75 V |
| Continuous Drain Current (ID) at TC=25C | 136 A | 120 A |
| Continuous Drain Current (ID) at TA=25C | 15.3 A | — |
| Power Dissipation (PD) at TC=25C | 300 W | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| On-Resistance RDS(on) max at VGS=10V | 6.9 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Total Gate Charge at VGS=10V (Qg) | [DATA_NEEDED: Qg value] | — |
| Betriebstemperaturbereich | -55C to +175C | — |
| Gehäuse | PG-TO220-3-1 (TO-220-3 through-hole, 3+tab) | TO-220AB (3-lead through-hole) |
| Montageart | Through Hole | Through Hole |
| Technology | OptiMOS 6 trench MOSFET | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| RoHS-Status | Compliant | — |
| Lead-Free | Yes | — |
| MSL-Level | N/A (through-hole package) | N/A (through-hole) |
| Tab Connection | Electrically connected to Drain | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRFB3207ZPBF |
| Series | — | HEXFET |
| Silicon-Limited Drain Current | — | 170 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| Betriebs-Sperrschichttemperatur | — | -55 C to +175 C |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| Avalanche Rated | — | Yes (improved Z-variant ruggedness) |