IPP069N20NM6AKSA1 vs IRFB3207ZPBF 비교

다음의 상세 나란히 비교: IPP069N20NM6AKSA1 제조: Infineon 및 IRFB3207ZPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IPP069N20NM6AKSA1 IRFB3207ZPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $4.10 $1.62
FET Type N-Channel —
Drain-Source Voltage (VDS) 200 V 75 V
Continuous Drain Current (ID) at TC=25C 136 A 120 A
Continuous Drain Current (ID) at TA=25C 15.3 A —
Power Dissipation (PD) at TC=25C 300 W —
Power Dissipation (PD) at TA=25C 3.8 W —
On-Resistance RDS(on) max at VGS=10V 6.9 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Total Gate Charge at VGS=10V (Qg) [DATA_NEEDED: Qg value] —
동작 온도 범위 -55C to +175C —
패키지 PG-TO220-3-1 (TO-220-3 through-hole, 3+tab) TO-220AB (3-lead through-hole)
실장 유형 Through Hole Through Hole
Technology OptiMOS 6 trench MOSFET N-Channel MOSFET (HEXFET, Z-suffix ruggedized)
RoHS 상태 Compliant —
Lead-Free Yes —
MSL 레벨 N/A (through-hole package) N/A (through-hole)
Tab Connection Electrically connected to Drain —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRFB3207ZPBF
Series — HEXFET
Silicon-Limited Drain Current — 170 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) typ @ VGS=10V — 3.3 mOhm
On-Resistance RDS(on) max @ VGS=10V — 4.1 mOhm
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C — 300 W
동작 접합 온도 — -55 C to +175 C
Lead-Free / RoHS — Yes (PBF suffix = lead-free)
Avalanche Rated — Yes (improved Z-variant ruggedness)

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