IPP069N20NM6AKSA1 vs IRFB3207ZPBF Сравнение
Подробное сравнение бок о бок IPP069N20NM6AKSA1 от Infineon и IRFB3207ZPBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IPP069N20NM6AKSA1 - 200V 136A OptiMOS 6 N-Channel MOSFET | Infineon
IPP069N20NM6AKSA1 ✓ Активен
Сравнение характеристик
| Параметр | IPP069N20NM6AKSA1 | IRFB3207ZPBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $4,10 | $1,62 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 200 V | 75 V |
| Continuous Drain Current (ID) at TC=25C | 136 A | 120 A |
| Continuous Drain Current (ID) at TA=25C | 15.3 A | — |
| Power Dissipation (PD) at TC=25C | 300 W | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| On-Resistance RDS(on) max at VGS=10V | 6.9 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Total Gate Charge at VGS=10V (Qg) | [DATA_NEEDED: Qg value] | — |
| Диапазон рабочих температур | -55C to +175C | — |
| Корпус | PG-TO220-3-1 (TO-220-3 through-hole, 3+tab) | TO-220AB (3-lead through-hole) |
| Тип монтажа | Through Hole | Through Hole |
| Technology | OptiMOS 6 trench MOSFET | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Статус RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Уровень MSL | N/A (through-hole package) | N/A (through-hole) |
| Tab Connection | Electrically connected to Drain | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRFB3207ZPBF |
| Series | — | HEXFET |
| Silicon-Limited Drain Current | — | 170 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| Рабочая температура перехода | — | -55 C to +175 C |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| Avalanche Rated | — | Yes (improved Z-variant ruggedness) |