IPP069N20NM6AKSA1 vs IRFB3207ZPBF Comparison
Detailed side-by-side comparison of IPP069N20NM6AKSA1 by Infineon and IRFB3207ZPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPP069N20NM6AKSA1 - 200V 136A OptiMOS 6 N-Channel MOSFET | Infineon
IPP069N20NM6AKSA1 β Active
Specification Comparison
| Parameter | IPP069N20NM6AKSA1 | IRFB3207ZPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.10 | $1.62 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 200 V | 75 V |
| Continuous Drain Current (ID) at TC=25C | 136 A | 120 A |
| Continuous Drain Current (ID) at TA=25C | 15.3 A | β |
| Power Dissipation (PD) at TC=25C | 300 W | β |
| Power Dissipation (PD) at TA=25C | 3.8 W | β |
| On-Resistance RDS(on) max at VGS=10V | 6.9 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | β |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | β |
| Total Gate Charge at VGS=10V (Qg) | [DATA_NEEDED: Qg value] | β |
| Operating Temperature Range | -55C to +175C | β |
| Package | PG-TO220-3-1 (TO-220-3 through-hole, 3+tab) | TO-220AB (3-lead through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Technology | OptiMOS 6 trench MOSFET | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| MSL Level | N/A (through-hole package) | N/A (through-hole) |
| Tab Connection | Electrically connected to Drain | β |
| Manufacturer | β | Infineon Technologies (formerly International Rectifier) |
| Part Number | β | IRFB3207ZPBF |
| Series | β | HEXFET |
| Silicon-Limited Drain Current | β | 170 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | β | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | β | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | β | 300 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| Lead-Free / RoHS | β | Yes (PBF suffix = lead-free) |
| Avalanche Rated | β | Yes (improved Z-variant ruggedness) |