IPP100N12S305AKSA1 vs IPP100N12S305AKSA2 Vergleich
Detaillierter Direktvergleich von IPP100N12S305AKSA1 von Infineon und IPP100N12S305AKSA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon
IPP100N12S305AKSA1 ✓ AktivInfineon
IPP100N12S305AKSA2 - 120V 100A N-Ch OptiMOS Power MOSFET | Infineon
IPP100N12S305AKSA2 ✓ AktivSpezifikationsvergleich
| Parameter | IPP100N12S305AKSA1 | IPP100N12S305AKSA2 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,05 | $3,78 |
| Transistortyp | N-Channel MOSFET | — |
| Technology | OptiMOS trench | — |
| Drain-Source Voltage (VDS) | 120 V | 120 V |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Gepulster Drain-Strom | [DATA_NEEDED: pulsed ID value] | — |
| Maximum Power Dissipation (Ptot) at Tc | 300 W | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Avalanche Energy, Single Pulse | [DATA_NEEDED: EAS] | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | — |
| Gehäuse | TO-220 (PG-TO220-3-1) | PG-TO220-3-1 (Through Hole) |
| Montageart | Through Hole | Through Hole |
| Pin-Anzahl | 3 | 3 (Gate, Drain, Source) |
| MSL Moisture Sensitivity Level | 1 (260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Avalanche Tested | 100% tested | — |
| RoHS Compliance | Compliant (Green product) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, TC=25C) | — | 100 A |
| Continuous Drain Current (ID, TC=100C) | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD, TC=25C) | — | 300 W |
| On-State Resistance R_DS(on) max @ VGS=10V | — | [DATA_NEEDED: R_DS(on) max] |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th)] |
| Gate Charge Qg typ @ VGS=10V | — | [DATA_NEEDED: total gate charge] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg value] |
| Reverse Recovery Charge Qrr | — | [DATA_NEEDED: Qrr value] |
| Betriebstemperaturbereich | — | -55C to +175C (TJ) |
| RoHS-Status | — | Compliant |
| MSL-Level | — | N/A (Through Hole) |
| Avalanche Energy Rated | — | Yes (single-pulse) |