IPP100N12S305AKSA1 vs IPP100N12S305AKSA2 对比

详细并排对比 IPP100N12S305AKSA1 出自 Infineon 和 IPP100N12S305AKSA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPP100N12S305AKSA1 IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon

IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon

IPP100N12S305AKSA1 ✓ 量产中

规格对比

参数 IPP100N12S305AKSA1 IPP100N12S305AKSA2
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.05 $3.78
晶体管类型 N-Channel MOSFET —
Technology OptiMOS trench —
Drain-Source Voltage (VDS) 120 V 120 V
Continuous Drain Current (ID) at Tc 100 A —
脉冲漏极电流 [DATA_NEEDED: pulsed ID value] —
Maximum Power Dissipation (Ptot) at Tc 300 W —
Gate-Source Voltage (VGS) max ±20 V —
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) at VGS=10V] —
Avalanche Energy, Single Pulse [DATA_NEEDED: EAS] —
工作结温 -55 °C to +175 °C —
封装 TO-220 (PG-TO220-3-1) PG-TO220-3-1 (Through Hole)
安装类型 Through Hole Through Hole
引脚数量 3 3 (Gate, Drain, Source)
MSL Moisture Sensitivity Level 1 (260 °C peak reflow) —
Automotive Qualification AEC-Q101 qualified —
Avalanche Tested 100% tested —
RoHS Compliance Compliant (Green product) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5
FET Type — N-Channel
Continuous Drain Current (ID, TC=25C) — 100 A
Continuous Drain Current (ID, TC=100C) — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD, TC=25C) — 300 W
On-State Resistance R_DS(on) max @ VGS=10V — [DATA_NEEDED: R_DS(on) max]
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th)]
Gate Charge Qg typ @ VGS=10V — [DATA_NEEDED: total gate charge]
Total Gate Charge Qg — [DATA_NEEDED: Qg value]
Reverse Recovery Charge Qrr — [DATA_NEEDED: Qrr value]
工作温度范围 — -55C to +175C (TJ)
RoHS 状态 — Compliant
MSL 等级 — N/A (Through Hole)
Avalanche Energy Rated — Yes (single-pulse)

数据手册与资源

浏览全部产品 创建 BOM 获取报价