IPP100N12S305AKSA1 vs IPP100N12S305AKSA2 Comparaison
Comparaison détaillée côte à côte de IPP100N12S305AKSA1 par Infineon et IPP100N12S305AKSA2 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon
IPP100N12S305AKSA1 ✓ ActifInfineon
IPP100N12S305AKSA2 - 120V 100A N-Ch OptiMOS Power MOSFET | Infineon
IPP100N12S305AKSA2 ✓ ActifComparaison des spécifications
| Paramètre | IPP100N12S305AKSA1 | IPP100N12S305AKSA2 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2,05 | $3,78 |
| Type de transistor | N-Channel MOSFET | — |
| Technology | OptiMOS trench | — |
| Drain-Source Voltage (VDS) | 120 V | 120 V |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Courant de drain pulsé | [DATA_NEEDED: pulsed ID value] | — |
| Maximum Power Dissipation (Ptot) at Tc | 300 W | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Avalanche Energy, Single Pulse | [DATA_NEEDED: EAS] | — |
| Température de jonction en fonctionnement | -55 °C to +175 °C | — |
| Boîtier | TO-220 (PG-TO220-3-1) | PG-TO220-3-1 (Through Hole) |
| Type de montage | Through Hole | Through Hole |
| Nombre de broches | 3 | 3 (Gate, Drain, Source) |
| MSL Moisture Sensitivity Level | 1 (260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Avalanche Tested | 100% tested | — |
| RoHS Compliance | Compliant (Green product) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, TC=25C) | — | 100 A |
| Continuous Drain Current (ID, TC=100C) | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD, TC=25C) | — | 300 W |
| On-State Resistance R_DS(on) max @ VGS=10V | — | [DATA_NEEDED: R_DS(on) max] |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th)] |
| Gate Charge Qg typ @ VGS=10V | — | [DATA_NEEDED: total gate charge] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg value] |
| Reverse Recovery Charge Qrr | — | [DATA_NEEDED: Qrr value] |
| Plage de température de fonctionnement | — | -55C to +175C (TJ) |
| Statut RoHS | — | Compliant |
| Niveau MSL | — | N/A (Through Hole) |
| Avalanche Energy Rated | — | Yes (single-pulse) |