IPP320N20N3GXKSA1 vs IPP100N12S305AKSA2 Vergleich

Detaillierter Direktvergleich von IPP320N20N3GXKSA1 von Infineon und IPP100N12S305AKSA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPP320N20N3GXKSA1 IPP100N12S305AKSA2
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,36 $3,78
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 OptiMOS 5
Technology N-Channel Trench MOSFET —
Drain-Source Voltage (VDS) 200 V 120 V
Continuous Drain Current (ID) at TC=25°C 34 A —
On-State Resistance RDS(on) max at VGS=10V 32 mΩ —
Gate Threshold Voltage VGS(th) typ 4 V [DATA_NEEDED: VGS(th)]
Total Power Dissipation PD at TC=25°C 136 W —
Gehäuse TO-220-3 (PG-TO220-3) through-hole PG-TO220-3-1 (Through Hole)
Montageart Through Hole Through Hole
Anzahl der Pins 3 (3 + Tab) —
Betriebstemperaturbereich -55°C to +175°C -55C to +175C (TJ)
Channel Type N-Channel —
Element Configuration Single —
RoHS-Status Compliant Compliant
Lead-Free Yes —
MSL-Level Not applicable (through-hole) N/A (Through Hole)
FET Type — N-Channel
Continuous Drain Current (ID, TC=25C) — 100 A
Continuous Drain Current (ID, TC=100C) — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD, TC=25C) — 300 W
On-State Resistance R_DS(on) max @ VGS=10V — [DATA_NEEDED: R_DS(on) max]
Gate Charge Qg typ @ VGS=10V — [DATA_NEEDED: total gate charge]
Total Gate Charge Qg — [DATA_NEEDED: Qg value]
Reverse Recovery Charge Qrr — [DATA_NEEDED: Qrr value]
Pin-Anzahl — 3 (Gate, Drain, Source)
Avalanche Energy Rated — Yes (single-pulse)

Datenblätter & Ressourcen

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