IPP320N20N3GXKSA1 vs IPP100N12S305AKSA2 Comparaison
Comparaison détaillée côte à côte de IPP320N20N3GXKSA1 par Infineon et IPP100N12S305AKSA2 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IPP320N20N3GXKSA1 - 200V 34A OptiMOS 3 N-Channel MOSFET | Infineon
IPP320N20N3GXKSA1 ✓ ActifInfineon
IPP100N12S305AKSA2 - 120V 100A N-Ch OptiMOS Power MOSFET | Infineon
IPP100N12S305AKSA2 ✓ ActifComparaison des spécifications
| Paramètre | IPP320N20N3GXKSA1 | IPP100N12S305AKSA2 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,36 | $3,78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | OptiMOS 5 |
| Technology | N-Channel Trench MOSFET | — |
| Drain-Source Voltage (VDS) | 200 V | 120 V |
| Continuous Drain Current (ID) at TC=25°C | 34 A | — |
| On-State Resistance RDS(on) max at VGS=10V | 32 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 4 V | [DATA_NEEDED: VGS(th)] |
| Total Power Dissipation PD at TC=25°C | 136 W | — |
| Boîtier | TO-220-3 (PG-TO220-3) through-hole | PG-TO220-3-1 (Through Hole) |
| Type de montage | Through Hole | Through Hole |
| Nombre de broches | 3 (3 + Tab) | — |
| Plage de température de fonctionnement | -55°C to +175°C | -55C to +175C (TJ) |
| Channel Type | N-Channel | — |
| Element Configuration | Single | — |
| Statut RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Niveau MSL | Not applicable (through-hole) | N/A (Through Hole) |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, TC=25C) | — | 100 A |
| Continuous Drain Current (ID, TC=100C) | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD, TC=25C) | — | 300 W |
| On-State Resistance R_DS(on) max @ VGS=10V | — | [DATA_NEEDED: R_DS(on) max] |
| Gate Charge Qg typ @ VGS=10V | — | [DATA_NEEDED: total gate charge] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg value] |
| Reverse Recovery Charge Qrr | — | [DATA_NEEDED: Qrr value] |
| Nombre de broches | — | 3 (Gate, Drain, Source) |
| Avalanche Energy Rated | — | Yes (single-pulse) |