IPP320N20N3GXKSA1 vs IPP100N12S305AKSA2 비교
다음의 상세 나란히 비교: IPP320N20N3GXKSA1 제조: Infineon 및 IPP100N12S305AKSA2 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
IPP100N12S305AKSA2 - 120V 100A N-Ch OptiMOS Power MOSFET | Infineon
IPP100N12S305AKSA2 ✓ 활성사양 비교
| 파라미터 | IPP320N20N3GXKSA1 | IPP100N12S305AKSA2 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.36 | $3.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | OptiMOS 5 |
| Technology | N-Channel Trench MOSFET | — |
| Drain-Source Voltage (VDS) | 200 V | 120 V |
| Continuous Drain Current (ID) at TC=25°C | 34 A | — |
| On-State Resistance RDS(on) max at VGS=10V | 32 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 4 V | [DATA_NEEDED: VGS(th)] |
| Total Power Dissipation PD at TC=25°C | 136 W | — |
| 패키지 | TO-220-3 (PG-TO220-3) through-hole | PG-TO220-3-1 (Through Hole) |
| 실장 유형 | Through Hole | Through Hole |
| 핀 수 | 3 (3 + Tab) | — |
| 동작 온도 범위 | -55°C to +175°C | -55C to +175C (TJ) |
| Channel Type | N-Channel | — |
| Element Configuration | Single | — |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL 레벨 | Not applicable (through-hole) | N/A (Through Hole) |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, TC=25C) | — | 100 A |
| Continuous Drain Current (ID, TC=100C) | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD, TC=25C) | — | 300 W |
| On-State Resistance R_DS(on) max @ VGS=10V | — | [DATA_NEEDED: R_DS(on) max] |
| Gate Charge Qg typ @ VGS=10V | — | [DATA_NEEDED: total gate charge] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg value] |
| Reverse Recovery Charge Qrr | — | [DATA_NEEDED: Qrr value] |
| 핀 수 | — | 3 (Gate, Drain, Source) |
| Avalanche Energy Rated | — | Yes (single-pulse) |