IPT007N06NATMA1 vs BSC0504NSIATMA1 Vergleich
Detaillierter Direktvergleich von IPT007N06NATMA1 von Infineon und BSC0504NSIATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPT007N06NATMA1 | BSC0504NSIATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,84 | $0,00 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, TC=25C) | 300 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance (RDS(on), VGS=10V max) | 0.75 mOhm | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max] | — |
| Power Dissipation (PD, TC=25C) | 375 W | — |
| Betriebstemperaturbereich | -55 C to +175 C (TJ) | [DATA_NEEDED: operating temperature range] |
| Gehäuse | PG-HSOF-8-1 (TOLL) | PG-TDSON-8-6 |
| Montageart | Surface Mount | Surface Mount |
| Configuration | Single N-channel | — |
| Gate Charge (QG) | [DATA_NEEDED: total gate charge] | — |
| Avalanche Energy (EAS) | [DATA_NEEDED: single-pulse avalanche energy] | — |
| Thermal Resistance (RthJC max) | [DATA_NEEDED: RthJC] | — |
| MSL-Level | MSL 1 (per JEDEC J-STD-020) | — |
| RoHS-Status | Compliant | unknown |
| Lead-Free | Yes | — |
| Halogenfrei | Yes | — |
| Standard Pack Quantity | 3000 (Tape & Reel) | — |
| Transistortyp | — | N-channel MOSFET |
| Drain-to-Source Voltage | — | 30 V |
| Continuous Drain Current at Ta | — | 21 A |
| Continuous Drain Current at Tc | — | 72 A |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 30 W |
| Technology Family | — | OptiMOS 5 |
| Anzahl der Pins | — | 8 pins |
| Exposed Pad | — | Yes, according to distributor package description |
| On-State Resistance | — | [DATA_NEEDED: on-state resistance] |
| Gate Charge | — | [DATA_NEEDED: gate charge] |
| Gate-Schwellenspannung | — | [DATA_NEEDED: gate threshold voltage] |
| Wärmewiderstand | — | [DATA_NEEDED: thermal resistance] |
| AEC-Q100 Qualification | — | [DATA_NEEDED: AEC-Q100 qualification] |
| Lead-Free Status | — | unknown |
| Halogen-Free Status | — | unknown |
| REACH Status | — | unknown |