IPT007N06NATMA1 vs BSC0504NSIATMA1 对比

详细并排对比 IPT007N06NATMA1 出自 Infineon 和 BSC0504NSIATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPT007N06NATMA1 IPT007N06NATMA1 - 60V 300A OptiMOS 5 N-FET | Infineon

IPT007N06NATMA1 - 60V 300A OptiMOS 5 N-FET | Infineon

IPT007N06NATMA1 ✓ 量产中

规格对比

参数 IPT007N06NATMA1 BSC0504NSIATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.84 $0.00
Technology OptiMOS 5 (N-channel trench MOSFET) —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID, TC=25C) 300 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance (RDS(on), VGS=10V max) 0.75 mOhm —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max] —
Power Dissipation (PD, TC=25C) 375 W —
工作温度范围 -55 C to +175 C (TJ) [DATA_NEEDED: operating temperature range]
封装 PG-HSOF-8-1 (TOLL) PG-TDSON-8-6
安装类型 Surface Mount Surface Mount
Configuration Single N-channel —
Gate Charge (QG) [DATA_NEEDED: total gate charge] —
Avalanche Energy (EAS) [DATA_NEEDED: single-pulse avalanche energy] —
Thermal Resistance (RthJC max) [DATA_NEEDED: RthJC] —
MSL 等级 MSL 1 (per JEDEC J-STD-020) —
RoHS 状态 Compliant unknown
Lead-Free Yes —
无卤 Yes —
Standard Pack Quantity 3000 (Tape & Reel) —
晶体管类型 — N-channel MOSFET
Drain-to-Source Voltage — 30 V
Continuous Drain Current at Ta — 21 A
Continuous Drain Current at Tc — 72 A
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 30 W
Technology Family — OptiMOS 5
引脚数 — 8 pins
Exposed Pad — Yes, according to distributor package description
On-State Resistance — [DATA_NEEDED: on-state resistance]
Gate Charge — [DATA_NEEDED: gate charge]
栅极阈值电压 — [DATA_NEEDED: gate threshold voltage]
热阻 — [DATA_NEEDED: thermal resistance]
AEC-Q100 Qualification — [DATA_NEEDED: AEC-Q100 qualification]
Lead-Free Status — unknown
Halogen-Free Status — unknown
REACH Status — unknown

数据手册与资源

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