IPT012N08N5ATMA1 vs IPT067N20NM6ATMA1 Vergleich

Detaillierter Direktvergleich von IPT012N08N5ATMA1 von Infineon und IPT067N20NM6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPT012N08N5ATMA1 IPT067N20NM6ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $4,32 $4,85
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPT012N08N5ATMA1 —
Technology OptiMOS 5 Trench-gate OptiMOS 6 silicon
Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 80 V —
Continuous Drain Current (ID, TC) 300 A —
Pulsed Drain Current (IDM) 400 A —
On-Resistance RDS(on) Max 1.2 mOhm —
Total Gate Charge QG 208 nC —
Gate-to-Drain Charge QGD 178 nC —
Power Dissipation (PD, TC) 375 W —
Gehäuse PG-HSOF-8 (TOLL) PG-HSOF-8-1 (8-pin + exposed tab)
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich -55C to +175C (TJ max) -55C to +150C (junction)
RoHS-Status Compliant Compliant
Qualification JEDEC JESD47, JESD22, J-STD-020 (industrial) —
Product Family — OptiMOS 6
Transistortyp — N-Channel MOSFET
Drain-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) at TA=25C — 15.3 A
Continuous Drain Current (ID) at TC=25C — 137 A
Power Dissipation (PD) at TA=25C — 3.8 W
Power Dissipation (PD) at TC=25C — 300 W
Gate-Source Voltage (VGS) — [DATA_NEEDED: max VGS rating]
On-Resistance RDS(on) typ — [DATA_NEEDED: RDS(on) at VGS=10V]
Gate Charge (Qg) typ — [DATA_NEEDED: total gate charge]
Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical value]
Lead-Free — Yes
MSL-Level — [DATA_NEEDED: MSL moisture sensitivity level]
Configuration — Single N-channel

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