IPT012N08N5ATMA1 vs IPT067N20NM6ATMA1 对比
详细并排对比 IPT012N08N5ATMA1 出自 Infineon 和 IPT067N20NM6ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPT012N08N5ATMA1 | IPT067N20NM6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.32 | $4.85 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPT012N08N5ATMA1 | — |
| Technology | OptiMOS 5 | Trench-gate OptiMOS 6 silicon |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 80 V | — |
| Continuous Drain Current (ID, TC) | 300 A | — |
| Pulsed Drain Current (IDM) | 400 A | — |
| On-Resistance RDS(on) Max | 1.2 mOhm | — |
| Total Gate Charge QG | 208 nC | — |
| Gate-to-Drain Charge QGD | 178 nC | — |
| Power Dissipation (PD, TC) | 375 W | — |
| 封装 | PG-HSOF-8 (TOLL) | PG-HSOF-8-1 (8-pin + exposed tab) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +175C (TJ max) | -55C to +150C (junction) |
| RoHS 状态 | Compliant | Compliant |
| Qualification | JEDEC JESD47, JESD22, J-STD-020 (industrial) | — |
| Product Family | — | OptiMOS 6 |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at TA=25C | — | 15.3 A |
| Continuous Drain Current (ID) at TC=25C | — | 137 A |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| Power Dissipation (PD) at TC=25C | — | 300 W |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: max VGS rating] |
| On-Resistance RDS(on) typ | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: total gate charge] |
| Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical value] |
| Lead-Free | — | Yes |
| MSL 等级 | — | [DATA_NEEDED: MSL moisture sensitivity level] |
| Configuration | — | Single N-channel |