IPW60R180P7XKSA1 vs IPA60R180P7SXKSA1 Vergleich
Detaillierter Direktvergleich von IPW60R180P7XKSA1 von Infineon und IPA60R180P7SXKSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPW60R180P7XKSA1 - 600V CoolMOS P7 MOSFET, 180mOhm, 18A | Infineon
IPW60R180P7XKSA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IPW60R180P7XKSA1 | IPA60R180P7SXKSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,60 | $0,74 |
| Technology | CoolMOS P7 (Superjunction, 7th generation) | Superjunction (SJ) N-channel MOSFET |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc=25C) | 18 A | — |
| On-Resistance RDS(on) max | 180 mOhm | — |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg value] | — |
| Power Dissipation (Pd, Tc=25C) | 72 W | — |
| Gate Threshold Voltage (VGS(th), typ) | 3.5 V | — |
| Gate Drive Voltage (VGS, recommended) | 10 V (typical), +/-20 V max | — |
| Betriebs-Sperrschichttemperatur | -55C to +150C | — |
| Gehäuse | PG-TO247-3 (TO-247-3, through-hole, 3+tab pins) | PG-TO220-3-312 (Through-Hole, 3 leads) |
| Montageart | Through Hole | Through Hole |
| Body Diode | Fast body diode with low reverse recovery (Qrr) | — |
| Integrated Gate Resistor | Yes | — |
| RoHS-Status | Compliant | Compliant |
| Orderable Part Number | IPW60R180P7XKSA1 (tube pack, industrial grade) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | CoolMOS P7 |
| Continuous Drain Current (ID) at Tc | — | 18 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 180 mOhm (max at 25C) |
| Power Dissipation (PD) at Tc | — | 26 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th)] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Betriebstemperaturbereich | — | -55C to +150C (junction) |
| Channel Type | — | N-Channel |
| Configuration | — | Single |
| Lead-Free | — | Yes |