IPW60R180P7XKSA1 vs IPB60R280P7ATMA1 Vergleich
Detaillierter Direktvergleich von IPW60R180P7XKSA1 von Infineon und IPB60R280P7ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPW60R180P7XKSA1 - 600V CoolMOS P7 MOSFET, 180mOhm, 18A | Infineon
IPW60R180P7XKSA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IPW60R180P7XKSA1 | IPB60R280P7ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,60 | $0,88 |
| Technology | CoolMOS P7 (Superjunction, 7th generation) | Superjunction (SJ) |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID, Tc=25C) | 18 A | — |
| On-Resistance RDS(on) max | 180 mOhm | — |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg value] | — |
| Power Dissipation (Pd, Tc=25C) | 72 W | — |
| Gate Threshold Voltage (VGS(th), typ) | 3.5 V | — |
| Gate Drive Voltage (VGS, recommended) | 10 V (typical), +/-20 V max | — |
| Betriebs-Sperrschichttemperatur | -55C to +150C | — |
| Gehäuse | PG-TO247-3 (TO-247-3, through-hole, 3+tab pins) | PG-TO263-3 (D2PAK) |
| Montageart | Through Hole | Surface Mount |
| Body Diode | Fast body diode with low reverse recovery (Qrr) | — |
| Integrated Gate Resistor | Yes | — |
| RoHS-Status | Compliant | Compliant |
| Orderable Part Number | IPW60R180P7XKSA1 (tube pack, industrial grade) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolMOS P7 (600 V) |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DSS) | — | 600 V |
| Continuous Drain Current (I_D, T_C=25°C) | — | 12 A |
| On-Resistance R_DS(on) max (V_GS=10V) | — | 280 mOhm |
| Gate-Source Threshold V_GS(th) typ | — | 3.5 V |
| Power Dissipation P_D (T_C=25°C) | — | 53 W |
| Pin-Anzahl | — | 3 (2 + Tab) |
| Betriebstemperaturbereich | — | -55 °C to +150 °C (T_j max) |
| Configuration | — | Single N-Channel |
| Lead-Free | — | Yes |
| Generation | — | 7th Gen CoolMOS (successor to P6) |