IPW60R180P7XKSA1 vs IPB60R280P7ATMA1 对比
详细并排对比 IPW60R180P7XKSA1 出自 Infineon 和 IPB60R280P7ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPW60R180P7XKSA1 | IPB60R280P7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.60 | $0.88 |
| Technology | CoolMOS P7 (Superjunction, 7th generation) | Superjunction (SJ) |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID, Tc=25C) | 18 A | — |
| On-Resistance RDS(on) max | 180 mOhm | — |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg value] | — |
| Power Dissipation (Pd, Tc=25C) | 72 W | — |
| Gate Threshold Voltage (VGS(th), typ) | 3.5 V | — |
| Gate Drive Voltage (VGS, recommended) | 10 V (typical), +/-20 V max | — |
| 工作结温 | -55C to +150C | — |
| 封装 | PG-TO247-3 (TO-247-3, through-hole, 3+tab pins) | PG-TO263-3 (D2PAK) |
| 安装类型 | Through Hole | Surface Mount |
| Body Diode | Fast body diode with low reverse recovery (Qrr) | — |
| Integrated Gate Resistor | Yes | — |
| RoHS 状态 | Compliant | Compliant |
| Orderable Part Number | IPW60R180P7XKSA1 (tube pack, industrial grade) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolMOS P7 (600 V) |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DSS) | — | 600 V |
| Continuous Drain Current (I_D, T_C=25°C) | — | 12 A |
| On-Resistance R_DS(on) max (V_GS=10V) | — | 280 mOhm |
| Gate-Source Threshold V_GS(th) typ | — | 3.5 V |
| Power Dissipation P_D (T_C=25°C) | — | 53 W |
| 引脚数量 | — | 3 (2 + Tab) |
| 工作温度范围 | — | -55 °C to +150 °C (T_j max) |
| Configuration | — | Single N-Channel |
| Lead-Free | — | Yes |
| Generation | — | 7th Gen CoolMOS (successor to P6) |