IQDH29NE2LM5CGSCATMA1 vs IQD020N10NM5CGATMA1 Vergleich
Detaillierter Direktvergleich von IQDH29NE2LM5CGSCATMA1 von Infineon und IQD020N10NM5CGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IQD020N10NM5CGATMA1 - 100V 2.0mΩ OptiMOS™ 5 N-MOSFET | Infineon
IQD020N10NM5CGATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IQDH29NE2LM5CGSCATMA1 | IQD020N10NM5CGATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,84 | $1,28 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 Power-Transistor | OptiMOS™ 5 N-channel trench MOSFET |
| Drain-Source Voltage (VDS) | 25 V | 100 V |
| Continuous Drain Current (Ta) | 75 A | — |
| Continuous Drain Current (Tc) | 789 A | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 278 W | — |
| Maximum On-Resistance RDS(on) | 0.29 mΩ | — |
| Gate Threshold Voltage VGS(th) | 2 V (typ) | — |
| Gehäuse | PG-WHTFN-9-U02 (WHTFN EP) | PG-TTFN-9-U02 (PQFN 5x6 mm²) |
| Pin-Anzahl | 9 | — |
| Montageart | Surface Mount | Surface Mount |
| Cooling | Dual-side exposed pad (top + bottom) | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating from datasheet] |
| RoHS-Status | Compliant | Compliant |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (ID) at TA=25°C | — | 26 A |
| Continuous Drain Current (ID) at TC=25°C | — | [DATA_NEEDED: ID at TC=25°C from datasheet curve] |
| Pulsed Drain Current (IDM) at TC=25°C | — | 273 A |
| Static Drain-Source On-Resistance RDS(on) max | — | 2.0 mΩ (at VGS=10V) |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 333 W |
| Betriebstemperaturbereich | — | -55°C to +175°C |
| Qualification | — | Industrial grade (Infineon OptiMOS™ 5 family) |