IQDH29NE2LM5CGSCATMA1 vs IQD020N10NM5CGATMA1 Comparison
Detailed side-by-side comparison of IQDH29NE2LM5CGSCATMA1 by Infineon and IQD020N10NM5CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQD020N10NM5CGATMA1 - 100V 2.0mΩ OptiMOS™ 5 N-MOSFET | Infineon
IQD020N10NM5CGATMA1 ✓ ActiveSpecification Comparison
| Parameter | IQDH29NE2LM5CGSCATMA1 | IQD020N10NM5CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.84 | $1.28 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 Power-Transistor | OptiMOS™ 5 N-channel trench MOSFET |
| Drain-Source Voltage (VDS) | 25 V | 100 V |
| Continuous Drain Current (Ta) | 75 A | — |
| Continuous Drain Current (Tc) | 789 A | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 278 W | — |
| Maximum On-Resistance RDS(on) | 0.29 mΩ | — |
| Gate Threshold Voltage VGS(th) | 2 V (typ) | — |
| Package | PG-WHTFN-9-U02 (WHTFN EP) | PG-TTFN-9-U02 (PQFN 5x6 mm²) |
| Pin Count | 9 | — |
| Mounting Type | Surface Mount | Surface Mount |
| Cooling | Dual-side exposed pad (top + bottom) | — |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating from datasheet] |
| RoHS Status | Compliant | Compliant |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (ID) at TA=25°C | — | 26 A |
| Continuous Drain Current (ID) at TC=25°C | — | [DATA_NEEDED: ID at TC=25°C from datasheet curve] |
| Pulsed Drain Current (IDM) at TC=25°C | — | 273 A |
| Static Drain-Source On-Resistance RDS(on) max | — | 2.0 mΩ (at VGS=10V) |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 333 W |
| Operating Temperature Range | — | -55°C to +175°C |
| Qualification | — | Industrial grade (Infineon OptiMOS™ 5 family) |