IQE008N03LM5ATMA1 vs ISC011N06LM5ATMA1 Vergleich

Detaillierter Direktvergleich von IQE008N03LM5ATMA1 von Infineon und ISC011N06LM5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IQE008N03LM5ATMA1 ISC011N06LM5ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,94 $0,74
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 —
Polarity / Channel Type N-Channel N-Channel
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) at TA=25°C 27 A —
Continuous Drain Current (ID) at TC=25°C 253 A —
On-Resistance RDS(on) Typical 0.85 mΩ (at 20 A, VGS=10 V per LCSC datasheet snippet) —
Gate Threshold Voltage (VGS(th)) 2 V (at 250 µA per LCSC snippet) [DATA_NEEDED: VGS(th) value]
Power Dissipation at TA=25°C 2.1 W —
Power Dissipation at TC=25°C 89 W —
Gehäuse PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down PG-TDSON-8-17 (SuperSO8 5x6 mm)
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich -55°C to +150°C (typical MOSFET junction rating) -55C to +175C
Gate-Source Voltage (VGS) Max ±20 V (typical MOSFET rating) —
Technology OptiMOS 5, Source-Down OptiMOS 5
RoHS-Status Compliant (per LCSC listing) Compliant
MSL-Level [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
Part Number — ISC011N06LM5ATMA1
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Ta — 37 A
Continuous Drain Current (ID) at Tc — 288 A
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 188 W
RDS(on) max at VGS=10V — 1.15 mOhm
Pin-Anzahl — 8
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]

Datenblätter & Ressourcen

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