IQEH84NE2LM7UCGATMA1 vs IQDH29NE2LM5CGSCATMA1 Vergleich
Detaillierter Direktvergleich von IQEH84NE2LM7UCGATMA1 von Infineon und IQDH29NE2LM5CGSCATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IQEH84NE2LM7UCGATMA1 | IQDH29NE2LM5CGSCATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,49 | $1,84 |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 7 (Trench MOSFET) | OptiMOS 5 Power-Transistor |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (ID) at Ta | 42 A | — |
| Pulsed Drain Current (IDM) at Tc | 275 A | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 107 W | — |
| RDS(on) @ VGS=10 V | [DATA_NEEDED: RDS(on) at 10 V] | — |
| RDS(on) @ VGS=4.5 V | [DATA_NEEDED: RDS(on) at 4.5 V] | — |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | — |
| Gehäuse | PG-TTFN-9-3 (surface mount, source-down) | PG-WHTFN-9-U02 (WHTFN EP) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | [DATA_NEEDED: pin count from datasheet pinout] | 9 |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Switching Application | Hard- and soft-switching | — |
| Continuous Drain Current (Ta) | — | 75 A |
| Continuous Drain Current (Tc) | — | 789 A |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 278 W |
| Maximum On-Resistance RDS(on) | — | 0.29 mΩ |
| Gate Threshold Voltage VGS(th) | — | 2 V (typ) |
| Cooling | — | Dual-side exposed pad (top + bottom) |
| MSL-Level | — | [DATA_NEEDED: MSL rating] |