IQEH84NE2LM7UCGATMA1 vs IQDH29NE2LM5CGSCATMA1 Comparison
Detailed side-by-side comparison of IQEH84NE2LM7UCGATMA1 by Infineon and IQDH29NE2LM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IQEH84NE2LM7UCGATMA1 | IQDH29NE2LM5CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 7 (Trench MOSFET) | OptiMOS 5 Power-Transistor |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (ID) at Ta | 42 A | — |
| Pulsed Drain Current (IDM) at Tc | 275 A | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 107 W | — |
| RDS(on) @ VGS=10 V | [DATA_NEEDED: RDS(on) at 10 V] | — |
| RDS(on) @ VGS=4.5 V | [DATA_NEEDED: RDS(on) at 4.5 V] | — |
| Operating Junction Temperature | -55 C to +175 C | — |
| Package | PG-TTFN-9-3 (surface mount, source-down) | PG-WHTFN-9-U02 (WHTFN EP) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | [DATA_NEEDED: pin count from datasheet pinout] | 9 |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Switching Application | Hard- and soft-switching | — |
| Continuous Drain Current (Ta) | — | 75 A |
| Continuous Drain Current (Tc) | — | 789 A |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 278 W |
| Maximum On-Resistance RDS(on) | — | 0.29 mΩ |
| Gate Threshold Voltage VGS(th) | — | 2 V (typ) |
| Cooling | — | Dual-side exposed pad (top + bottom) |
| MSL Level | — | [DATA_NEEDED: MSL rating] |