IQEH84NE2LM7UCGATMA1 vs IQDH29NE2LM5CGSCATMA1 Comparison

Detailed side-by-side comparison of IQEH84NE2LM7UCGATMA1 by Infineon and IQDH29NE2LM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQEH84NE2LM7UCGATMA1

IQEH84NE2LM7UCGATMA1 - 25V OptiMOS 7 N-FET, 275A | Infineon

IQEH84NE2LM7UCGATMA1 βœ“ Active
Infineon
IQDH29NE2LM5CGSCATMA1

IQDH29NE2LM5CGSCATMA1 - 25V N-Ch 0.29mΞ© MOSFET | Infineon

IQDH29NE2LM5CGSCATMA1 βœ“ Active

Specification Comparison

Parameter IQEH84NE2LM7UCGATMA1 IQDH29NE2LM5CGSCATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.49 $1.84
FET Type N-Channel N-Channel
Technology OptiMOS 7 (Trench MOSFET) OptiMOS 5 Power-Transistor
Drain-Source Voltage (VDS) 25 V 25 V
Continuous Drain Current (ID) at Ta 42 A β€”
Pulsed Drain Current (IDM) at Tc 275 A β€”
Power Dissipation (PD) at Ta 2.5 W β€”
Power Dissipation (PD) at Tc 107 W β€”
RDS(on) @ VGS=10 V [DATA_NEEDED: RDS(on) at 10 V] β€”
RDS(on) @ VGS=4.5 V [DATA_NEEDED: RDS(on) at 4.5 V] β€”
Operating Junction Temperature -55 C to +175 C β€”
Package PG-TTFN-9-3 (surface mount, source-down) PG-WHTFN-9-U02 (WHTFN EP)
Mounting Type Surface Mount Surface Mount
Pin Count [DATA_NEEDED: pin count from datasheet pinout] 9
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Switching Application Hard- and soft-switching β€”
Continuous Drain Current (Ta) β€” 75 A
Continuous Drain Current (Tc) β€” 789 A
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 278 W
Maximum On-Resistance RDS(on) β€” 0.29 mΞ©
Gate Threshold Voltage VGS(th) β€” 2 V (typ)
Cooling β€” Dual-side exposed pad (top + bottom)
MSL Level β€” [DATA_NEEDED: MSL rating]

Datasheets & Resources

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