IQEH84NE2LM7UCGATMA1 vs IQDH29NE2LM5CGSCATMA1 对比

详细并排对比 IQEH84NE2LM7UCGATMA1 出自 Infineon 和 IQDH29NE2LM5CGSCATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IQEH84NE2LM7UCGATMA1 IQEH84NE2LM7UCGATMA1 - 25V OptiMOS 7 N-FET, 275A | Infineon

IQEH84NE2LM7UCGATMA1 - 25V OptiMOS 7 N-FET, 275A | Infineon

IQEH84NE2LM7UCGATMA1 ✓ 量产中
Infineon
IQDH29NE2LM5CGSCATMA1 IQDH29NE2LM5CGSCATMA1 - 25V N-Ch 0.29mΩ MOSFET | Infineon

IQDH29NE2LM5CGSCATMA1 - 25V N-Ch 0.29mΩ MOSFET | Infineon

IQDH29NE2LM5CGSCATMA1 ✓ 量产中

规格对比

参数 IQEH84NE2LM7UCGATMA1 IQDH29NE2LM5CGSCATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.49 $1.84
FET Type N-Channel N-Channel
Technology OptiMOS 7 (Trench MOSFET) OptiMOS 5 Power-Transistor
Drain-Source Voltage (VDS) 25 V 25 V
Continuous Drain Current (ID) at Ta 42 A —
Pulsed Drain Current (IDM) at Tc 275 A —
Power Dissipation (PD) at Ta 2.5 W —
Power Dissipation (PD) at Tc 107 W —
RDS(on) @ VGS=10 V [DATA_NEEDED: RDS(on) at 10 V] —
RDS(on) @ VGS=4.5 V [DATA_NEEDED: RDS(on) at 4.5 V] —
工作结温 -55 C to +175 C —
封装 PG-TTFN-9-3 (surface mount, source-down) PG-WHTFN-9-U02 (WHTFN EP)
安装类型 Surface Mount Surface Mount
引脚数量 [DATA_NEEDED: pin count from datasheet pinout] 9
RoHS 状态 Compliant Compliant
Lead-Free Yes —
Switching Application Hard- and soft-switching —
Continuous Drain Current (Ta) — 75 A
Continuous Drain Current (Tc) — 789 A
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 278 W
Maximum On-Resistance RDS(on) — 0.29 mΩ
Gate Threshold Voltage VGS(th) — 2 V (typ)
Cooling — Dual-side exposed pad (top + bottom)
MSL 等级 — [DATA_NEEDED: MSL rating]

数据手册与资源

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