IR2101STRPBF - 600V Half-Bridge Gate Driver, 8-SOIC | Infineon
Teilenummer: IR2101STRPBF ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $1.42 | $1,42 |
| 10 | $1.21 | $12,10 |
| 100 | $0.96 | $96,00 |
| 500 | $0.81 | $405,00 |
| 1.000 | $0.68 | $680,00 |
IR2101STRPBF Übersicht
A gate driver is a power-management IC that sits between a low-power controller (logic-level PWM) and the gate of a discrete power transistor (MOSFET or IGBT). It level-shifts the logic-level PWM up to the rail needed to drive the high-side switch in a half-bridge or full-bridge topology, and provides the brief bursts of high peak current needed to quickly charge and discharge the power device's gate capacitance. In the system hierarchy, the gate driver belongs to the power-management IC family and is the enabling link between a digital controller and the high-current switching stage in any SMPS, motor-drive, or Class-D audio amplifier.
Key features include an integrated bootstrap diode eliminating the need for an external discrete component, undervoltage lockout (UVLO) for both the VCC and VBS rails, matched propagation delays between high-side and low-side channels, and dV/dt immunity engineered to reject the fast transient edges present in hard-switched half-bridge nodes. The floating high-side channel operates up to 600 V above the return, and the device tolerates negative transient voltages on the VS pin typical of half-bridge switching stages.
Architecturally, the device uses Infineon's HVIC and latch-immune CMOS technology to provide a ruggedized monolithic construction with a level-shifted high-side channel. The internal bootstrap diode charges the VBS floating supply capacitor on every low-side cycle. Logic inputs are TTL/CMOS compatible and include a shutdown feature on the LIN pin, while matched internal delay paths ensure the dead-time inserted by the controller is preserved between the high-side and low-side outputs to prevent shoot-through currents.
Typical applications include DC-DC converter half-bridge stages, BLDC and PMSM motor-control inverter drivers up to 600 V, SMPS primary-side high-voltage half-bridges, electronic ballasts for HID lighting, Class-D audio amplifiers, industrial automation, solar micro-inverters, and small-appliance variable-frequency drives. The combination of features keeps the BOM small while delivering reliable drive for half-bridge, full-bridge, and three-phase inverter stages.
When designing with this part, ensure the bootstrap capacitor is sized to provide sufficient gate charge for the high-side MOSFET over the full switching cycle. The VCC decoupling must be a low-ESR ceramic placed as close to the VCC pin as possible, and the floating supply (VBS-VS) requires its own local 0.1 uF + bulk capacitor.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet. Engineers evaluating a half-bridge gate driver for a 600 V switching stage will find a parametric comparison and application-focused design guidance here.
Drop-in-Alternativen für IR2101STRPBF – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit IR2101STRPBF (gleiche Bauform und Footprint) – abweichend in Package, Configuration, Logic Input Compatibility, Number of Outputs, RoHS Status.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
IR2101SPBF
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IR2104STRPBF
✅ Drop-In✓ Auf Lager
$0.59 / Stück
Datenblatt ansehen →IR2109STRPBF
✅ Drop-In✓ Auf Lager
$0.61 / Stück
Datenblatt ansehen →IRS2101STRPBF
✅ Drop-In✓ Auf Lager
$1.18 / Stück
Datenblatt ansehen →IRS21091STRPBF
✅ Drop-In✓ Auf Lager
$0.65 / Stück
Datenblatt ansehen →IR2101STRPBF Grenzwerte & elektrische Eigenschaften
| Configuration | Half-Bridge (High-Side and Low-Side), Independent |
| Number of Drivers | 2 |
| Driver Type | Non-Inverting |
| Maximum Offset Voltage | 600 V |
| Gate Drive Supply Voltage (VCC) | 10 V to 20 V |
| Source Current (Typ.) | 210 mA |
| Sink Current (Typ.) | 360 mA |
| Propagation Delay (Typ.) | 160 ns |
| Logic Input Compatibility | 3.3 V / 5 V / 15 V CMOS/LSTTL |
| Bootstrap Diode | Integrated |
| Undervoltage Lockout (UVLO) | Yes (VCC and VBS) |
| Negative Transient Immunity on VS | Yes (dV/dt immune) |
| Gehäuse | 8-SOIC (0.154 inch, 3.90 mm Width) |
| Montageart | Surface Mount |
| Betriebstemperatur | -40 C to +125 C |
| MSL-Level | MSL 3 |
| RoHS-Status | Compliant |
IR2101STRPBF Pin-Konfiguration
| Pin 1 | VCC — Logic and low-side gate drive supply (10-20 V) |
| Pin 2 | IN — Logic input for high-side and low-side (active-high, TTL/CMOS compatible) |
| Pin 3 | SD — Shutdown (active-low logic input) |
| Pin 4 | COM — Low-side return / ground |
| Pin 5 | LO — Low-side gate drive output |
| Pin 6 | VS — High-side floating supply return |
| Pin 7 | HO — High-side gate drive output |
| Pin 8 | VB — High-side floating supply (bootstrap) |
Typische Anwendungen
IR2101STRPBF ist geeignet für 6 Anwendungs: BLDC / PMSM Motor Drive Inverter, SMPS Primary-Side Half-Bridge, Class-D Audio Amplifier Output Stage, Electronic Ballast for HID Lighting, Solar Micro-Inverter, Variable-Frequency Drive for Small Appliances.
BLDC / PMSM Motor Drive Inverter
The IR2101STRPBF is a standard half-bridge gate driver for 3-phase BLDC and PMSM motor inverters up to 600 V bus voltage. With 0.21 A source / 0.36 A sink drive, it directly drives IGBTs or 600 V MOSFETs used as inverter switches in 110/220 VAC industrial motor drives up to several kW. The integrated bootstrap diode eliminates one BOM component per half-bridge, allowing three IR2101STRPBF devices (one per phase leg) to fit a compact 3-phase inverter with minimal external parts. The matched 160 ns propagation delay between channels preserves the MCU-inserted dead-time, preventing shoot-through currents that would otherwise destroy the inverter.
Empfohlen
SMPS Primary-Side Half-Bridge
The IR2101STRPBF drives the primary-side half-bridge in switch-mode power supplies where a 600 V MOSFET or IGBT half-bridge switches the rectified 311 V (220 VAC) or 170 V (110 VAC) DC bus. Its 600 V floating high-side channel with dV/dt immunity handles the hard-switched half-bridge node reliably. The 0.21 A source / 0.36 A sink capability charges the MOSFET gate quickly enough to minimize switching losses, while the internal bootstrap diode charges VBS from VCC on every low-side cycle, simplifying the supply network. Typical uses include telecom power supplies, server PSUs, and industrial DIN-rail SMPS modules up to 1 kW.
Empfohlen
Class-D Audio Amplifier Output Stage
The IR2101STRPBF drives the output MOSFET half-bridge in Class-D audio amplifiers where the 600 V rating headroom covers amplifier rails up to +/-200 V, well above typical 24-48 V automotive and prosumer audio rails. The 160 ns matched propagation delay and 0.21/0.36 A drive current minimize dead-time distortion, which is audible in Class-D output as THD. The internal bootstrap diode and 10-20 V VCC operation simplify the supply design. Use two IR2101STRPBF devices per channel (one per rail of the full-bridge output) to achieve a fully differential switching amplifier with low distortion and high efficiency.
Empfohlen
Electronic Ballast for HID Lighting
The IR2101STRPBF drives the half-bridge inverter in electronic ballasts for high-intensity discharge (HID) lamps, where the ballast converts DC to high-frequency AC to drive the lamp without flicker. The 600 V rating suits 230 VAC rectified bus (325 V DC) with adequate margin. The 0.36 A sink current quickly discharges the MOSFET gate to keep switching losses low at the high switching frequencies (30-100 kHz) used for HID ballasts. The internal bootstrap diode reduces BOM cost in the price-sensitive ballast market, while the matched propagation delays ensure clean lamp current waveforms.
Empfohlen
Solar Micro-Inverter
The IR2101STRPBF drives the push-pull or half-bridge stages in solar micro-inverters that connect a single PV panel (typically 30-60 V Voc) to the AC grid. While the 600 V rating exceeds solar PV voltages, it provides ample margin for the DC-link voltage of grid-tie inverters up to 480 V AC. The integrated bootstrap diode and 8-SOIC footprint keep the micro-inverter BOM small and cheap - critical for the cost-sensitive micro-inverter market. The IR2101STRPBF drives the high-frequency primary switching stage while MPPT algorithms and grid-sync are handled by the microcontroller.
Empfohlen
Variable-Frequency Drive for Small Appliances
The IR2101STRPBF drives the half-bridge inverter in variable-frequency drives (VFDs) for small appliances such as washing machines, refrigerators, and HVAC compressors using BLDC or PMSM motors. The 600 V rating suits single-phase 220 VAC rectified bus (311 V DC). Three IR2101STRPBF devices drive a 3-phase inverter up to several kW, while the integrated bootstrap diode keeps the BOM small for the cost-sensitive appliance market. The 10-20 V VCC operation is compatible with standard 15 V auxiliary rails from the SMPS that powers the appliance controller.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für IR2101STRPBF – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | IR2101SPBF | IR2104STRPBF | IR2109STRPBF | IRS2101STRPBF | IRS21091STRPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | 8-SOIC | 8-SOIC (Tube) | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
| Configuration | Half-Bridge | Half-Bridge | Half-Bridge | Half-Bridge | Half-Bridge | Half-Bridge |
| Maximum Offset Voltage | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| Source Current (Typ.) | 210 mA | 210 mA | 200 mA | 200 mA | 210 mA | 200 mA |
| Sink Current (Typ.) | 360 mA | 360 mA | 350 mA | 350 mA | 360 mA | 350 mA |
| Propagation Delay (Typ.) | 160 ns | 160 ns | 200 ns | 200 ns | 160 ns | 200 ns |
| Bootstrap Diode | Integrated | Integrated | Integrated | Integrated | Integrated | Integrated |
| Built-in Dead-Time / Shutdown | Shutdown (SD pin) | Shutdown (SD pin) | Built-in dead-time | Shutdown + OC protection | Shutdown (SD pin) | Fault reporting + shutdown |
| RoHS / Lifecycle | Compliant / Active | Compliant / Active | Compliant / Active | Compliant / Active | Compliant / Active | Compliant / Active |
Wichtigste Unterscheidungsmerkmale
- Industry-standard 600 V half-bridge driver with integrated bootstrap diode (vs. IR2104STRPBF)
- Lower quiescent current than the IRS21091STRPBF with fault reporting (vs. IRS21091STRPBF)
- Same die in two package options (SOIC-8 vs DIP-8) (vs. IR2101PBF (DIP-8))
Designhinweise
Bootstrap capacitor sizing is critical for the IR2101STRPBF: the VBS bootstrap capacitor must supply the gate charge Qg of the high-side MOSFET plus enough margin to keep VBS above the UVLO threshold for the entire high-side on-time. Estimated: for a MOSFET with Qg = 50 nC, switching at 20 kHz with a 50% duty cycle, the bootstrap capacitor should be at least 0.47 uF ceramic with low ESR, plus a 0.1 uF local bypass cap on VBS-VS placed within 5 mm of the IC pins. Too-small a capacitor causes the high-side gate to drop below UVLO and produce shoot-through events.
VCC decoupling must use a low-ESR ceramic capacitor (>= 0.1 uF X7R) placed within 3 mm of the VCC pin, with a 1 uF bulk cap nearby. The high-side floating supply (VBS-VS) requires its own local 0.1 uF ceramic plus a bulk capacitor. The power ground (COM) and signal ground should connect at a single point near the IC to avoid high-di/dt ground bounce coupling into the logic input IN. Keep the high-voltage traces (VB, VS, HO) physically separated from the low-voltage logic pins by at least 3 mm to minimize noise coupling.
While the IR2101STRPBF is a controller IC (not a power switch), it still dissipates power from the internal bootstrap diode and gate drive currents. Estimated: at 20 kHz with 50 nC Qg, the gate-drive losses are Pdrive = VCC * Qg * fsw = 15V * 50nC * 20kHz = 15 mW per channel, plus bootstrap diode conduction losses of ~100 mW. The 8-SOIC package (theta-JA ~150 C/W) can handle this without a heatsink, but the IC should be placed away from hot power components. Maximum operating junction temperature is 150 C.
Common pitfall #1: omitting the bootstrap capacitor or using an electrolytic with high ESR - causes VBS to droop below UVLO and the high-side to stop switching. Common pitfall #2: leaving the SD (shutdown) pin floating - it must be pulled HIGH (to VCC or logic high) for normal operation, or pulled LOW to disable both outputs. Common pitfall #3: allowing the high-side to remain on for >50% duty cycle - the bootstrap capacitor has no time to recharge from VCC via the internal diode. Common pitfall #4: driving IN with a signal that has insufficient voltage swing - the IR2101STRPBF needs true 3.3 V or 5 V CMOS/TTL logic levels at the IN pin for clean switching.
Compliance-Informationen
RoHS compliant per Infineon product page. MSL 3 moisture sensitivity level. Industrial grade temperature range -40 C to +125 C. Not AEC-Q100 qualified; for automotive use consider the AUIRS21271STR.
