IR2104STRPBF vs 2ED2183S06FXUMA1 Vergleich

Detaillierter Direktvergleich von IR2104STRPBF von Infineon und 2ED2183S06FXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IR2104STRPBF 2ED2183S06FXUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,59 $1,05
Product Type Half-Bridge Gate Driver IC —
Configuration High-side and low-side referenced output channels High Side, Low Side, Non-Inverting
Anzahl der Ausgänge 2 (high-side + low-side) 1 (half-bridge: high-side + low-side)
Offset Voltage (High-Side, Max) 600 V —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Output Source Current (typ) 0.21 A —
Output Sink Current (typ) 0.36 A —
Rise Time (typ) 100 ns —
Fall Time (typ) 50 ns —
Propagation Delay (typ) 680 ns —
Turn-On Propagation Delay (typ) 150 ns —
Turn-Off Propagation Delay (typ) 130 ns —
Quiescent Current (VCC/VBS, typ) 150 uA —
Input Logic Compatibility 3.3 V, 5 V, 15 V logic —
Shutdown Pin Yes (active-low shutdown input) —
Undervoltage Lockout Yes (VCC and VBS) —
Cross-Conduction Prevention Yes (matched propagation delay) —
dV/dt Immunity Yes —
Negative VS Transient Tolerance Yes —
Betriebstemperaturbereich -40 C to +150 C —
Gehäuse 8-SOIC (SOIC-8) PG-DSO-8-53 (DSO-8)
Montageart Surface Mount Surface Mount
RoHS-Status Compliant Compliant
Driver Type — Half-Bridge Gate Driver
Number of Drivers — 1
Maximum Offset Voltage — 650 V
Output Current (Sink/Source) — 2.5 A typical
Anstiegszeit — 15 ns
Abfallzeit — 15 ns
Supply Voltage (VCC) — 10 V to 20 V
Bootstrap Supply (VBS) — 10 V to 20 V (typ.)
Logic Input Voltage — 3.3 V / 5 V compatible (HIN, LIN)
Input Type — Non-Inverting
Bootstrap Diode — Integrated
Undervoltage Lockout (UVLO) — VCC and VBS
Betriebstemperatur — -40 C to +125 C
MSL-Level — 2
Terminal Finish — Tin (e3 per JESD-609)
Technology — SOI (Silicon-On-Insulator)

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