IR2104STRPBF vs 2ED2183S06FXUMA1 比較
詳細な並列比較: IR2104STRPBF メーカー: Infineon および 2ED2183S06FXUMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IR2104STRPBF | 2ED2183S06FXUMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | Power MOSFET Drivers | Power MOSFET Drivers |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.59 | $1.05 |
| Product Type | Half-Bridge Gate Driver IC | — |
| Configuration | High-side and low-side referenced output channels | High Side, Low Side, Non-Inverting |
| 出力数 | 2 (high-side + low-side) | 1 (half-bridge: high-side + low-side) |
| Offset Voltage (High-Side, Max) | 600 V | — |
| Gate Drive Supply Voltage (VCC) | 10 V to 20 V | — |
| Output Source Current (typ) | 0.21 A | — |
| Output Sink Current (typ) | 0.36 A | — |
| Rise Time (typ) | 100 ns | — |
| Fall Time (typ) | 50 ns | — |
| Propagation Delay (typ) | 680 ns | — |
| Turn-On Propagation Delay (typ) | 150 ns | — |
| Turn-Off Propagation Delay (typ) | 130 ns | — |
| Quiescent Current (VCC/VBS, typ) | 150 uA | — |
| Input Logic Compatibility | 3.3 V, 5 V, 15 V logic | — |
| Shutdown Pin | Yes (active-low shutdown input) | — |
| Undervoltage Lockout | Yes (VCC and VBS) | — |
| Cross-Conduction Prevention | Yes (matched propagation delay) | — |
| dV/dt Immunity | Yes | — |
| Negative VS Transient Tolerance | Yes | — |
| 動作温度範囲 | -40 C to +150 C | — |
| パッケージ | 8-SOIC (SOIC-8) | PG-DSO-8-53 (DSO-8) |
| 実装タイプ | Surface Mount | Surface Mount |
| RoHS ステータス | Compliant | Compliant |
| Driver Type | — | Half-Bridge Gate Driver |
| Number of Drivers | — | 1 |
| Maximum Offset Voltage | — | 650 V |
| Output Current (Sink/Source) | — | 2.5 A typical |
| 立ち上がり時間 | — | 15 ns |
| 立ち下がり時間 | — | 15 ns |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Bootstrap Supply (VBS) | — | 10 V to 20 V (typ.) |
| Logic Input Voltage | — | 3.3 V / 5 V compatible (HIN, LIN) |
| Input Type | — | Non-Inverting |
| Bootstrap Diode | — | Integrated |
| Undervoltage Lockout (UVLO) | — | VCC and VBS |
| 動作温度 | — | -40 C to +125 C |
| MSLレベル | — | 2 |
| Terminal Finish | — | Tin (e3 per JESD-609) |
| Technology | — | SOI (Silicon-On-Insulator) |