IR2104STRPBF vs 2ED2183S06FXUMA1 비교
다음의 상세 나란히 비교: IR2104STRPBF 제조: Infineon 및 2ED2183S06FXUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IR2104STRPBF | 2ED2183S06FXUMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | Power MOSFET Drivers | Power MOSFET Drivers |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.59 | $1.05 |
| Product Type | Half-Bridge Gate Driver IC | — |
| Configuration | High-side and low-side referenced output channels | High Side, Low Side, Non-Inverting |
| 출력 수 | 2 (high-side + low-side) | 1 (half-bridge: high-side + low-side) |
| Offset Voltage (High-Side, Max) | 600 V | — |
| Gate Drive Supply Voltage (VCC) | 10 V to 20 V | — |
| Output Source Current (typ) | 0.21 A | — |
| Output Sink Current (typ) | 0.36 A | — |
| Rise Time (typ) | 100 ns | — |
| Fall Time (typ) | 50 ns | — |
| Propagation Delay (typ) | 680 ns | — |
| Turn-On Propagation Delay (typ) | 150 ns | — |
| Turn-Off Propagation Delay (typ) | 130 ns | — |
| Quiescent Current (VCC/VBS, typ) | 150 uA | — |
| Input Logic Compatibility | 3.3 V, 5 V, 15 V logic | — |
| Shutdown Pin | Yes (active-low shutdown input) | — |
| Undervoltage Lockout | Yes (VCC and VBS) | — |
| Cross-Conduction Prevention | Yes (matched propagation delay) | — |
| dV/dt Immunity | Yes | — |
| Negative VS Transient Tolerance | Yes | — |
| 동작 온도 범위 | -40 C to +150 C | — |
| 패키지 | 8-SOIC (SOIC-8) | PG-DSO-8-53 (DSO-8) |
| 실장 유형 | Surface Mount | Surface Mount |
| RoHS 상태 | Compliant | Compliant |
| Driver Type | — | Half-Bridge Gate Driver |
| Number of Drivers | — | 1 |
| Maximum Offset Voltage | — | 650 V |
| Output Current (Sink/Source) | — | 2.5 A typical |
| 상승 시간 | — | 15 ns |
| 하강 시간 | — | 15 ns |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Bootstrap Supply (VBS) | — | 10 V to 20 V (typ.) |
| Logic Input Voltage | — | 3.3 V / 5 V compatible (HIN, LIN) |
| Input Type | — | Non-Inverting |
| Bootstrap Diode | — | Integrated |
| Undervoltage Lockout (UVLO) | — | VCC and VBS |
| 동작 온도 | — | -40 C to +125 C |
| MSL 레벨 | — | 2 |
| Terminal Finish | — | Tin (e3 per JESD-609) |
| Technology | — | SOI (Silicon-On-Insulator) |