IR2117SPBF vs IR2109SPBF Vergleich
Detaillierter Direktvergleich von IR2117SPBF von Infineon und IR2109SPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IR2117SPBF | IR2109SPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,21 | $1,05 |
| Configuration | Single high-side driver | — |
| Driver Type | High-side gate driver (non-inverting) | — |
| Number of Drivers | 1 | 2 (high-side + low-side) |
| Maximum Offset (Bootstrap) Voltage | 600 V | — |
| Output Current (Source, typ.) | 0.25 A | — |
| Output Current (Sink, typ.) | 0.5 A | — |
| Gate Drive Supply Voltage (VBS) | 10 V to 20 V | — |
| Logic Supply Voltage (VCC) | [DATA_NEEDED: VCC range] | — |
| Input Type | CMOS Schmitt-triggered with internal pull-down | — |
| Logic Input Polarity | Non-inverting | — |
| Undervoltage Lockout (UVLO) | Yes | — |
| Bootstrap Operation | Yes (floating channel) | — |
| dV/dt Immunity | Yes | — |
| Negative Transient Tolerance | Yes | — |
| Gehäuse | 8-SOIC (SOIC-8) | SOIC-8 |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -40C to +125C | — |
| RoHS-Status | Compliant (PbF suffix) | Compliant |
| Lead Finish | Lead-free (PbF) | — |
| Family | IR2117 / IR2118 series | — |
| Driver Configuration | — | Half-Bridge |
| High-Side Voltage Tolerance | — | 600 V |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Source Current (typical) | — | 0.2 A |
| Sink Current (typical) | — | 0.35 A |
| Turn-On Propagation Delay | — | 150 ns |
| Turn-Off Propagation Delay | — | 150 ns |
| Anstiegszeit | — | 200 ns |
| Abfallzeit | — | 50 ns |
| Quiescent VCC Current | — | 1 mA |
| Input Logic Compatibility | — | 3.3 V / 5 V CMOS / TTL |
| Undervoltage Lockout | — | Yes (VCC) |
| Bootstrap Diode | — | Integrated |
| Betriebs-Sperrschichttemperatur | — | -40 C to +150 C |