IR2117SPBF vs IR2109SPBF Comparação
Comparação detalhada lado a lado de IR2117SPBF por Infineon e IR2109SPBF por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IR2117SPBF | IR2109SPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | Power MOSFET Drivers | Power MOSFET Drivers |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $1,21 | $1,05 |
| Configuration | Single high-side driver | — |
| Driver Type | High-side gate driver (non-inverting) | — |
| Number of Drivers | 1 | 2 (high-side + low-side) |
| Maximum Offset (Bootstrap) Voltage | 600 V | — |
| Output Current (Source, typ.) | 0.25 A | — |
| Output Current (Sink, typ.) | 0.5 A | — |
| Gate Drive Supply Voltage (VBS) | 10 V to 20 V | — |
| Logic Supply Voltage (VCC) | [DATA_NEEDED: VCC range] | — |
| Input Type | CMOS Schmitt-triggered with internal pull-down | — |
| Logic Input Polarity | Non-inverting | — |
| Undervoltage Lockout (UVLO) | Yes | — |
| Bootstrap Operation | Yes (floating channel) | — |
| dV/dt Immunity | Yes | — |
| Negative Transient Tolerance | Yes | — |
| Encapsulamento | 8-SOIC (SOIC-8) | SOIC-8 |
| Tipo de montagem | Surface Mount | Surface Mount |
| Temperatura de operação | -40C to +125C | — |
| Status RoHS | Compliant (PbF suffix) | Compliant |
| Lead Finish | Lead-free (PbF) | — |
| Family | IR2117 / IR2118 series | — |
| Driver Configuration | — | Half-Bridge |
| High-Side Voltage Tolerance | — | 600 V |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Source Current (typical) | — | 0.2 A |
| Sink Current (typical) | — | 0.35 A |
| Turn-On Propagation Delay | — | 150 ns |
| Turn-Off Propagation Delay | — | 150 ns |
| Tempo de subida | — | 200 ns |
| Tempo de descida | — | 50 ns |
| Quiescent VCC Current | — | 1 mA |
| Input Logic Compatibility | — | 3.3 V / 5 V CMOS / TTL |
| Undervoltage Lockout | — | Yes (VCC) |
| Bootstrap Diode | — | Integrated |
| Temperatura de junção de operação | — | -40 C to +150 C |