IRF3205STRLPBF vs IPD100N04S402ATMA1 Vergleich

Detaillierter Direktvergleich von IRF3205STRLPBF von Infineon und IPD100N04S402ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IPD100N04S402ATMA1 IPD100N04S402ATMA1 - 40V 100A Automotive N-MOSFET | Infineon

IPD100N04S402ATMA1 - 40V 100A Automotive N-MOSFET | Infineon

IPD100N04S402ATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IRF3205STRLPBF IPD100N04S402ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,02 $0,00
Polarity N-Channel —
MOSFET Operating Mode Enhancement —
Drain-Source Voltage (Vdss) 55 V —
Continuous Drain Current (Id) @ Tc=25°C 110 A —
Pulsed Drain Current (Idm) 390 A —
Static Drain-Source On-Resistance (Rds(on)) 8 mΩ max @ Vgs=10V —
Gate-Source Threshold Voltage (Vgs(th)) 2.0 V to 4.0 V —
Total Gate Charge (Qg) 97.3 nC typical —
Power Dissipation (Pd) @ Tc=25°C 200 W —
Betriebstemperaturbereich -55 °C to +175 °C (Tj) —
Gehäuse TO-263-3 (D2PAK) PG-TO252-3-313 surface-mount DPAK
Montageart Surface Mount Surface mount
Lead-Free / RoHS Status Lead-Free / RoHS Compliant (PBF suffix) —
Technology HEXFET (advanced process) —
Packaging Tape & Reel (STRL) —
Channel Type — N-channel
Operating Mode — Enhancement mode
Drain-Source Voltage — 40 V
Continuous Drain Current — 100 A at Tc
Power Dissipation — 150 W at Tc
On-Resistance — 4.0 mΩ
Configuration — Single MOSFET with built-in diode
Pin-Anzahl — 3 pins plus tab
Automotive Qualification — AEC-Q101 qualified
Avalanche Testing — 100% avalanche tested
Minimum Operating Temperature — -55°C
Maximum Operating Temperature — 175°C
Peak Reflow Temperature — 260°C
Moisture Sensitivity Level — MSL1
RoHS-Status — Compliant
Package Body Material — Plastic/epoxy
JEDEC Package Code — TO-252
Gate Charge — [DATA_NEEDED: gate charge]
Gate-Schwellenspannung — [DATA_NEEDED: gate threshold voltage]
Reverse-Biased Safe Operating Area — [DATA_NEEDED: SOA data]

Datenblätter & Ressourcen

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