IRF3205STRLPBF vs IPD100N04S402ATMA1 对比

详细并排对比 IRF3205STRLPBF 出自 Infineon 和 IPD100N04S402ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRF3205STRLPBF IRF3205STRLPBF - 55V 110A N-Ch HEXFET MOSFET | Infineon

IRF3205STRLPBF - 55V 110A N-Ch HEXFET MOSFET | Infineon

IRF3205STRLPBF ✓ 量产中
Infineon
IPD100N04S402ATMA1 IPD100N04S402ATMA1 - 40V 100A Automotive N-MOSFET | Infineon

IPD100N04S402ATMA1 - 40V 100A Automotive N-MOSFET | Infineon

IPD100N04S402ATMA1 ✓ 量产中

规格对比

参数 IRF3205STRLPBF IPD100N04S402ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.02 $0.00
Polarity N-Channel —
MOSFET Operating Mode Enhancement —
Drain-Source Voltage (Vdss) 55 V —
Continuous Drain Current (Id) @ Tc=25°C 110 A —
Pulsed Drain Current (Idm) 390 A —
Static Drain-Source On-Resistance (Rds(on)) 8 mΩ max @ Vgs=10V —
Gate-Source Threshold Voltage (Vgs(th)) 2.0 V to 4.0 V —
Total Gate Charge (Qg) 97.3 nC typical —
Power Dissipation (Pd) @ Tc=25°C 200 W —
工作温度范围 -55 °C to +175 °C (Tj) —
封装 TO-263-3 (D2PAK) PG-TO252-3-313 surface-mount DPAK
安装类型 Surface Mount Surface mount
Lead-Free / RoHS Status Lead-Free / RoHS Compliant (PBF suffix) —
Technology HEXFET (advanced process) —
Packaging Tape & Reel (STRL) —
Channel Type — N-channel
Operating Mode — Enhancement mode
Drain-Source Voltage — 40 V
Continuous Drain Current — 100 A at Tc
Power Dissipation — 150 W at Tc
On-Resistance — 4.0 mΩ
Configuration — Single MOSFET with built-in diode
引脚数量 — 3 pins plus tab
Automotive Qualification — AEC-Q101 qualified
Avalanche Testing — 100% avalanche tested
Minimum Operating Temperature — -55°C
Maximum Operating Temperature — 175°C
Peak Reflow Temperature — 260°C
Moisture Sensitivity Level — MSL1
RoHS 状态 — Compliant
Package Body Material — Plastic/epoxy
JEDEC Package Code — TO-252
Gate Charge — [DATA_NEEDED: gate charge]
栅极阈值电压 — [DATA_NEEDED: gate threshold voltage]
Reverse-Biased Safe Operating Area — [DATA_NEEDED: SOA data]

数据手册与资源

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