IRF3205STRLPBF vs IPD100N04S402ATMA1 비교
다음의 상세 나란히 비교: IRF3205STRLPBF 제조: Infineon 및 IPD100N04S402ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRF3205STRLPBF | IPD100N04S402ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.02 | $0.00 |
| Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (Vdss) | 55 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 110 A | — |
| Pulsed Drain Current (Idm) | 390 A | — |
| Static Drain-Source On-Resistance (Rds(on)) | 8 mΩ max @ Vgs=10V | — |
| Gate-Source Threshold Voltage (Vgs(th)) | 2.0 V to 4.0 V | — |
| Total Gate Charge (Qg) | 97.3 nC typical | — |
| Power Dissipation (Pd) @ Tc=25°C | 200 W | — |
| 동작 온도 범위 | -55 °C to +175 °C (Tj) | — |
| 패키지 | TO-263-3 (D2PAK) | PG-TO252-3-313 surface-mount DPAK |
| 실장 유형 | Surface Mount | Surface mount |
| Lead-Free / RoHS Status | Lead-Free / RoHS Compliant (PBF suffix) | — |
| Technology | HEXFET (advanced process) | — |
| Packaging | Tape & Reel (STRL) | — |
| Channel Type | — | N-channel |
| Operating Mode | — | Enhancement mode |
| Drain-Source Voltage | — | 40 V |
| Continuous Drain Current | — | 100 A at Tc |
| Power Dissipation | — | 150 W at Tc |
| On-Resistance | — | 4.0 mΩ |
| Configuration | — | Single MOSFET with built-in diode |
| 핀 수 | — | 3 pins plus tab |
| Automotive Qualification | — | AEC-Q101 qualified |
| Avalanche Testing | — | 100% avalanche tested |
| Minimum Operating Temperature | — | -55°C |
| Maximum Operating Temperature | — | 175°C |
| Peak Reflow Temperature | — | 260°C |
| Moisture Sensitivity Level | — | MSL1 |
| RoHS 상태 | — | Compliant |
| Package Body Material | — | Plastic/epoxy |
| JEDEC Package Code | — | TO-252 |
| Gate Charge | — | [DATA_NEEDED: gate charge] |
| 게이트 임계 전압 | — | [DATA_NEEDED: gate threshold voltage] |
| Reverse-Biased Safe Operating Area | — | [DATA_NEEDED: SOA data] |