IRF7389TRPBF vs IRF7389PBF Vergleich

Detaillierter Direktvergleich von IRF7389TRPBF von Infineon und IRF7389PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRF7389TRPBF IRF7389PBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,58 $0,61
Transistor Polarity N and P Channel —
Drain-Source Voltage (Vds) 30 V —
Continuous Drain Current (N-Ch, Id) 7.3 A —
Continuous Drain Current (P-Ch, Id) -5.3 A —
On-Resistance RDS(on) Max 29 mOhm —
Power Dissipation (Pd) 2.5 W —
Configuration Dual N+P Complementary Half-Bridge N and P-Channel (complementary half-bridge)
Technology HEXFET Generation V (IR MOSFET) Generation V HEXFET
Gehäuse 8-SO (SOIC-8) SO-8 (SOIC-8) surface mount
Montageart Surface Mount Surface Mount
Betriebstemperatur -55C to +150C —
Avalanche Rated Yes Yes (fully avalanche rated)
Lead Free / RoHS Lead Free / RoHS Compliant —
MSL-Level 1 —
Manufacturer Infineon (formerly International Rectifier) —
Drain-to-Source Voltage N-Ch (V_DSS) — 30 V
Drain-to-Source Voltage P-Ch (V_DSS) — -30 V
Continuous Drain Current N-Ch (I_D) — 7.3 A
Continuous Drain Current P-Ch (I_D) — -5.3 A
On-Resistance N-Ch R_DS(on) max — 0.029 ohm at V_GS=10V
On-Resistance P-Ch R_DS(on) max — 0.058 ohm at V_GS=10V
Total Gate Charge N-Ch (Q_g) typical — 22 nC
Total Gate Charge P-Ch (Q_g) typical — 23 nC
Power Dissipation (P_D) — 2.5 W
Pinout — Industry-standard complementary SO-8
Betriebstemperaturbereich — [DATA_NEEDED: full operating temperature range]
RoHS-Status — Compliant
Lead-Free — Yes
Halogenfrei — Yes

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern