IRF7389TRPBF vs IRF7389PBF 比較
詳細な並列比較: IRF7389TRPBF メーカー: Infineon および IRF7389PBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRF7389TRPBF | IRF7389PBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.58 | $0.61 |
| Transistor Polarity | N and P Channel | — |
| Drain-Source Voltage (Vds) | 30 V | — |
| Continuous Drain Current (N-Ch, Id) | 7.3 A | — |
| Continuous Drain Current (P-Ch, Id) | -5.3 A | — |
| On-Resistance RDS(on) Max | 29 mOhm | — |
| Power Dissipation (Pd) | 2.5 W | — |
| Configuration | Dual N+P Complementary Half-Bridge | N and P-Channel (complementary half-bridge) |
| Technology | HEXFET Generation V (IR MOSFET) | Generation V HEXFET |
| パッケージ | 8-SO (SOIC-8) | SO-8 (SOIC-8) surface mount |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度 | -55C to +150C | — |
| Avalanche Rated | Yes | Yes (fully avalanche rated) |
| Lead Free / RoHS | Lead Free / RoHS Compliant | — |
| MSLレベル | 1 | — |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| Drain-to-Source Voltage N-Ch (V_DSS) | — | 30 V |
| Drain-to-Source Voltage P-Ch (V_DSS) | — | -30 V |
| Continuous Drain Current N-Ch (I_D) | — | 7.3 A |
| Continuous Drain Current P-Ch (I_D) | — | -5.3 A |
| On-Resistance N-Ch R_DS(on) max | — | 0.029 ohm at V_GS=10V |
| On-Resistance P-Ch R_DS(on) max | — | 0.058 ohm at V_GS=10V |
| Total Gate Charge N-Ch (Q_g) typical | — | 22 nC |
| Total Gate Charge P-Ch (Q_g) typical | — | 23 nC |
| Power Dissipation (P_D) | — | 2.5 W |
| Pinout | — | Industry-standard complementary SO-8 |
| 動作温度範囲 | — | [DATA_NEEDED: full operating temperature range] |
| RoHS ステータス | — | Compliant |
| Lead-Free | — | Yes |
| ハロゲンフリー | — | Yes |