IRF7389TRPBF vs IRF7389PBF Comparison

Detailed side-by-side comparison of IRF7389TRPBF by Infineon and IRF7389PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7389TRPBF IRF7389PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.58 $0.61
Transistor Polarity N and P Channel β€”
Drain-Source Voltage (Vds) 30 V β€”
Continuous Drain Current (N-Ch, Id) 7.3 A β€”
Continuous Drain Current (P-Ch, Id) -5.3 A β€”
On-Resistance RDS(on) Max 29 mOhm β€”
Power Dissipation (Pd) 2.5 W β€”
Configuration Dual N+P Complementary Half-Bridge N and P-Channel (complementary half-bridge)
Technology HEXFET Generation V (IR MOSFET) Generation V HEXFET
Package 8-SO (SOIC-8) SO-8 (SOIC-8) surface mount
Mounting Type Surface Mount Surface Mount
Operating Temperature -55C to +150C β€”
Avalanche Rated Yes Yes (fully avalanche rated)
Lead Free / RoHS Lead Free / RoHS Compliant β€”
MSL Level 1 β€”
Manufacturer Infineon (formerly International Rectifier) β€”
Drain-to-Source Voltage N-Ch (V_DSS) β€” 30 V
Drain-to-Source Voltage P-Ch (V_DSS) β€” -30 V
Continuous Drain Current N-Ch (I_D) β€” 7.3 A
Continuous Drain Current P-Ch (I_D) β€” -5.3 A
On-Resistance N-Ch R_DS(on) max β€” 0.029 ohm at V_GS=10V
On-Resistance P-Ch R_DS(on) max β€” 0.058 ohm at V_GS=10V
Total Gate Charge N-Ch (Q_g) typical β€” 22 nC
Total Gate Charge P-Ch (Q_g) typical β€” 23 nC
Power Dissipation (P_D) β€” 2.5 W
Pinout β€” Industry-standard complementary SO-8
Operating Temperature Range β€” [DATA_NEEDED: full operating temperature range]
RoHS Status β€” Compliant
Lead-Free β€” Yes
Halogen-Free β€” Yes

Datasheets & Resources

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