IRF7416TRPBF vs FDS6575 Vergleich
Detaillierter Direktvergleich von IRF7416TRPBF von Infineon und FDS6575 von onsemi. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRF7416TRPBF | FDS6575 |
|---|---|---|
| Marke | Infineon | onsemi |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,32 | $0,28 |
| FET Type | P-Channel | — |
| Technology | HEXFET (IR MOSFET) | PowerTrench (rugged gate) |
| Drain-to-Source Voltage (VDS) | -30 V | — |
| Continuous Drain Current (ID) at TA=25C | -10 A | — |
| Pulsed Drain Current (IDM) | -50 A | — |
| Static Drain-to-Source On-Resistance (RDS(on)) max | 20 mOhm at VGS = -10 V | — |
| Gate-to-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | -1 V to -3 V | — |
| Total Gate Charge (Qg) | 61 nC | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) max at TA=25C | 2.5 W | — |
| Thermal Resistance, Junction-to-Ambient (RthJA) | 50 C/W | — |
| Betriebs-Sperrschichttemperaturbereich | -55 C to +150 C | — |
| Gehäuse | 8-SO (SOIC-8) | SOIC-8 (SO-8) |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL-Level | 1 (unlimited) | — |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -20 V |
| Continuous Drain Current (ID) | — | -10 A |
| On-Resistance (RDS(on)) | — | 13 mOhm max at VGS = -4.5 V |
| Gate Drive Voltage Range | — | 2.5 V to 8 V |
| Gate-Schwellenspannung | — | [DATA_NEEDED: gate threshold voltage range] |
| Power Dissipation | — | [DATA_NEEDED: power dissipation at TA] |
| Betriebstemperaturbereich | — | [DATA_NEEDED: operating temperature range] |
| Configuration | — | Single MOSFET |
| Gate Source Voltage (VGS) Range | — | [DATA_NEEDED: VGS max rating] |