IRF7416TRPBF vs FDS6575 对比

详细并排对比 IRF7416TRPBF 出自 Infineon 和 FDS6575 出自 onsemi。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRF7416TRPBF IRF7416TRPBF - P-Ch 30V 10A HEXFET MOSFET | Infineon

IRF7416TRPBF - P-Ch 30V 10A HEXFET MOSFET | Infineon

IRF7416TRPBF ✓ 量产中

规格对比

参数 IRF7416TRPBF FDS6575
品牌 Infineon onsemi
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.32 $0.28
FET Type P-Channel —
Technology HEXFET (IR MOSFET) PowerTrench (rugged gate)
Drain-to-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) at TA=25C -10 A —
Pulsed Drain Current (IDM) -50 A —
Static Drain-to-Source On-Resistance (RDS(on)) max 20 mOhm at VGS = -10 V —
Gate-to-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) -1 V to -3 V —
Total Gate Charge (Qg) 61 nC [DATA_NEEDED: total gate charge]
Power Dissipation (PD) max at TA=25C 2.5 W —
Thermal Resistance, Junction-to-Ambient (RthJA) 50 C/W —
工作结温范围 -55 C to +150 C —
封装 8-SO (SOIC-8) SOIC-8 (SO-8)
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant Compliant
Lead-Free Yes —
MSL 等级 1 (unlimited) —
Polarity — P-Channel
Drain-Source Voltage (VDS) — -20 V
Continuous Drain Current (ID) — -10 A
On-Resistance (RDS(on)) — 13 mOhm max at VGS = -4.5 V
Gate Drive Voltage Range — 2.5 V to 8 V
栅极阈值电压 — [DATA_NEEDED: gate threshold voltage range]
Power Dissipation — [DATA_NEEDED: power dissipation at TA]
工作温度范围 — [DATA_NEEDED: operating temperature range]
Configuration — Single MOSFET
Gate Source Voltage (VGS) Range — [DATA_NEEDED: VGS max rating]

数据手册与资源

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