IRF7416TRPBF vs FDS6575 比較
詳細な並列比較: IRF7416TRPBF メーカー: Infineon および FDS6575 メーカー: onsemi。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRF7416TRPBF | FDS6575 |
|---|---|---|
| ブランド | Infineon | onsemi |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.32 | $0.28 |
| FET Type | P-Channel | — |
| Technology | HEXFET (IR MOSFET) | PowerTrench (rugged gate) |
| Drain-to-Source Voltage (VDS) | -30 V | — |
| Continuous Drain Current (ID) at TA=25C | -10 A | — |
| Pulsed Drain Current (IDM) | -50 A | — |
| Static Drain-to-Source On-Resistance (RDS(on)) max | 20 mOhm at VGS = -10 V | — |
| Gate-to-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | -1 V to -3 V | — |
| Total Gate Charge (Qg) | 61 nC | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) max at TA=25C | 2.5 W | — |
| Thermal Resistance, Junction-to-Ambient (RthJA) | 50 C/W | — |
| 動作接合温度範囲 | -55 C to +150 C | — |
| パッケージ | 8-SO (SOIC-8) | SOIC-8 (SO-8) |
| 実装タイプ | Surface Mount | Surface Mount |
| RoHS ステータス | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSLレベル | 1 (unlimited) | — |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -20 V |
| Continuous Drain Current (ID) | — | -10 A |
| On-Resistance (RDS(on)) | — | 13 mOhm max at VGS = -4.5 V |
| Gate Drive Voltage Range | — | 2.5 V to 8 V |
| ゲートしきい値電圧 | — | [DATA_NEEDED: gate threshold voltage range] |
| Power Dissipation | — | [DATA_NEEDED: power dissipation at TA] |
| 動作温度範囲 | — | [DATA_NEEDED: operating temperature range] |
| Configuration | — | Single MOSFET |
| Gate Source Voltage (VGS) Range | — | [DATA_NEEDED: VGS max rating] |