IRF7832TRPBF vs IRF8736PBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRF7832TRPBF tarafından Infineon ve IRF8736PBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRF7832TRPBF | IRF8736PBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRF7832TRPBF | — |
| FET Type | N-Channel | — |
| Technology | HEXFET (trench MOSFET) | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 20 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | 4.0 mOhm | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Gate Threshold Voltage (VGS(th)) typical | 1.0 V to 2.5 V | — |
| Total Gate Charge (Qg) typical | 34 nC | — |
| Power Dissipation (PD) at TA=25C | 2.5 W | — |
| İşletim Sıcaklığı Aralığı | -55 C to +150 C (TJ) | -55°C to +150°C (junction) |
| Paket | 8-SO (SOIC-8) | SO-8 (8-SO) |
| Montaj Türü | Surface Mount | Surface Mount |
| MSL Seviyesi | 1 (per JEDEC J-STD-020) | 1 (Unlimited) |
| RoHS Durumu | Compliant | — |
| Lead-Free | Yes | — |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25°C | — | 18 A |
| Continuous Drain Current (ID) at TA=70°C | — | [DATA_NEEDED: ID at TA=70°C] |
| On-Resistance RDS(on) at VGS=10V | — | 4.8 mΩ |
| On-Resistance RDS(on) at VGS=4.5V | — | 6.0 mΩ (typical) |
| Gate-Source Threshold Voltage VGS(th) | — | Logic-level (optimized for 5 V drive) |
| Total Gate Charge Qg | — | 17 nC (typical) |
| Maximum Power Dissipation at TA=25°C | — | 2.5 W |
| RoHS / Lead-Free | — | Lead-Free, RoHS3 Compliant |
| Qualification Standard | — | JEDEC |
| Avalanche Rated | — | Yes (fully characterized avalanche voltage and current) |