IRF7832TRPBF vs IRF8736PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF7832TRPBF sa pamamagitan ng Infineon at IRF8736PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF7832TRPBF IRF8736PBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRF7832TRPBF —
FET Type N-Channel —
Technology HEXFET (trench MOSFET) —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at TA=25C 20 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V 4.0 mOhm —
Gate-Source Voltage (VGS) max +/- 20 V —
Gate Threshold Voltage (VGS(th)) typical 1.0 V to 2.5 V —
Total Gate Charge (Qg) typical 34 nC —
Power Dissipation (PD) at TA=25C 2.5 W —
Hanay ng Temperature na Operasyon -55 C to +150 C (TJ) -55°C to +150°C (junction)
Packhaging 8-SO (SOIC-8) SO-8 (8-SO)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 (per JEDEC J-STD-020) 1 (Unlimited)
Tindminan RoHS Compliant —
Lead-Free Yes —
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at TA=25°C — 18 A
Continuous Drain Current (ID) at TA=70°C — [DATA_NEEDED: ID at TA=70°C]
On-Resistance RDS(on) at VGS=10V — 4.8 mΩ
On-Resistance RDS(on) at VGS=4.5V — 6.0 mΩ (typical)
Gate-Source Threshold Voltage VGS(th) — Logic-level (optimized for 5 V drive)
Total Gate Charge Qg — 17 nC (typical)
Maximum Power Dissipation at TA=25°C — 2.5 W
RoHS / Lead-Free — Lead-Free, RoHS3 Compliant
Qualification Standard — JEDEC
Avalanche Rated — Yes (fully characterized avalanche voltage and current)

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