IRF7854TRPBF vs IRF7380TRPBF Vergleich
Detaillierter Direktvergleich von IRF7854TRPBF von Infineon und IRF7380TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRF7854TRPBF | IRF7380TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,48 | $0,32 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Ta=25°C | 10 A | — |
| Power Dissipation (PD) at Ta=25°C | 2.5 W | — |
| On-Resistance RDS(on) max at VGS=10V | 13.4 mΩ | — |
| Gate-Source Threshold Voltage VGS(th) max | 4.9 V | — |
| Total Gate Charge Qg | 27 nC | — |
| Gehäuse | SO-8 | SO-8 (8-SO, SOIC-8) |
| Montageart | Surface Mount | Surface Mount |
| Technology | HEXFET (planar N-channel) | IR MOSFET™ (Infineon HEXFET-style planar N-ch) |
| Betriebstemperaturbereich | -55°C to +150°C (TJ) | — |
| Lead-Free / RoHS | Yes (PBF suffix, lead-free) | Yes (Pb-free plating, suffix PBF) |
| Qualification | JEDEC industrial, Normal level | — |
| Solder Process | Reflow and wave-solderable | — |
| Gate Drive Voltage (recommended) | 10 V | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF7380TRPBF |
| Configuration | — | Dual N-Channel MOSFET Array (2 independent FETs in one package) |
| Drain-to-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) | — | 3.6 A |
| On-Resistance RDS(on) max | — | 73 mOhm at VGS = 10 V |
| Total Power Dissipation (PD) | — | 2 W |
| Betriebs-Sperrschichttemperatur | — | -55 C to +150 C |
| Gate Drive Voltage (typical) | — | 10 V (full RDS(on)); logic-level not guaranteed |
| Packaging | — | Tape & Reel (suffix TR) |
| Primary Application | — | High-frequency DC-DC converters |