IRFB4020PBF vs IRF2805PBF Vergleich
Detaillierter Direktvergleich von IRFB4020PBF von Infineon und IRF2805PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFB4020PBF | IRF2805PBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,38 | $1,38 |
| FET Type | N-Channel | N-Channel |
| Technology | IR MOSFET (HEXFET) | HEXFET Power MOSFET (IR MOSFET) |
| Drain-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at TC | 18 A | — |
| Power Dissipation (PD) at TC | 100 W | — |
| RDS(on) Maximum | 100 mOhm | — |
| Gate-Source Voltage (VGS) Maximum | 20 V | — |
| Thermal Resistance, Junction-to-Case (RthJC) | 1.43 C/W | — |
| Betriebs-Sperrschichttemperatur | 175 C (max) | — |
| Gehäuse | TO-220AB (through-hole) | TO-220AB (3-pin, through-hole) |
| Montageart | Through Hole | Through Hole |
| Pin-Anzahl | 3 (Gate, Drain, Source) | — |
| Lead-Free (PbF suffix) | Yes | — |
| Market Qualification | Consumer | — |
| Recommended Use | Class-D audio amplifier and high-efficiency switching applications | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF2805PBF |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc | — | 75 A |
| Continuous Drain Current (ID) at 25°C | — | 175 A (pulsed / package-limited) |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.7 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | 4 V |
| Total Gate Charge (Qg) | — | 150 nC |
| Power Dissipation (PD) at Tc | — | 330 W |
| Maximum Junction Temperature | — | 175 °C |
| RoHS-Status | — | Compliant (Pb-free) |
| Betriebstemperaturbereich | — | -55 °C to +175 °C |
| Configuration | — | Single N-Channel MOSFET |