IRFR120NTRLPBF vs IRFR9120NTRLPBF Vergleich
Detaillierter Direktvergleich von IRFR120NTRLPBF von Infineon und IRFR9120NTRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFR120NTRLPBF | IRFR9120NTRLPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,62 | $0,61 |
| FET Type | N-Channel | — |
| Technology | IR MOSFET (HEXFET) | IR MOSFET (planar) |
| Drain-Source Voltage (VDS) | 100 V | -100 V |
| Continuous Drain Current (ID) at TC=25C | 9.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | -2 V to -4 V |
| On-Resistance RDS(on) max at VGS=10V | 210 mΩ | — |
| Total Gate Charge (Qg) | 16.7 nC | — |
| Power Dissipation (PD) at TC=25C | 48 W | — |
| Betriebs-Sperrschichttemperaturbereich | -55C to +175C | — |
| Avalanche Energy Rated | Yes (fully avalanche rated) | — |
| Gehäuse | PG-TO252-3 (DPAK) | TO-252AA (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | Compliant (Pb-free) |
| Lead-Free Finish | Yes (Pb-free) | — |
| Transistor Polarity | — | P-Channel |
| Continuous Drain Current (ID) | — | -6.6 A (Tc) |
| Gate-Source Voltage (VGS) | — | ±20 V |
| On-Resistance (RDS(on)) | — | 480 mOhm max @ VGS = -10 V |
| Gate Charge (Qg) | — | 18 nC (typ) |
| Power Dissipation (PD) | — | 40 W (Tc) |
| Betriebstemperaturbereich | — | -55C to +150C (Tj) |
| Pin-Anzahl | — | 3 (Gate, Drain, Source) |
| MSL-Level | — | 1 |
| Lead-Free | — | Yes |