IRFR120NTRLPBF vs IRFR9120NTRLPBF 对比

详细并排对比 IRFR120NTRLPBF 出自 Infineon 和 IRFR9120NTRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRFR120NTRLPBF IRFR9120NTRLPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.62 $0.61
FET Type N-Channel —
Technology IR MOSFET (HEXFET) IR MOSFET (planar)
Drain-Source Voltage (VDS) 100 V -100 V
Continuous Drain Current (ID) at TC=25C 9.4 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] -2 V to -4 V
On-Resistance RDS(on) max at VGS=10V 210 mΩ —
Total Gate Charge (Qg) 16.7 nC —
Power Dissipation (PD) at TC=25C 48 W —
工作结温范围 -55C to +175C —
Avalanche Energy Rated Yes (fully avalanche rated) —
封装 PG-TO252-3 (DPAK) TO-252AA (DPAK)
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant Compliant (Pb-free)
Lead-Free Finish Yes (Pb-free) —
Transistor Polarity — P-Channel
Continuous Drain Current (ID) — -6.6 A (Tc)
Gate-Source Voltage (VGS) — ±20 V
On-Resistance (RDS(on)) — 480 mOhm max @ VGS = -10 V
Gate Charge (Qg) — 18 nC (typ)
Power Dissipation (PD) — 40 W (Tc)
工作温度范围 — -55C to +150C (Tj)
引脚数量 — 3 (Gate, Drain, Source)
MSL 等级 — 1
Lead-Free — Yes

数据手册与资源

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