IRFR120NTRLPBF vs IRFR9120NTRLPBF Comparison

Detailed side-by-side comparison of IRFR120NTRLPBF by Infineon and IRFR9120NTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFR120NTRLPBF IRFR9120NTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.62 $0.61
FET Type N-Channel β€”
Technology IR MOSFET (HEXFET) IR MOSFET (planar)
Drain-Source Voltage (VDS) 100 V -100 V
Continuous Drain Current (ID) at TC=25C 9.4 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] -2 V to -4 V
On-Resistance RDS(on) max at VGS=10V 210 mΞ© β€”
Total Gate Charge (Qg) 16.7 nC β€”
Power Dissipation (PD) at TC=25C 48 W β€”
Operating Junction Temperature Range -55C to +175C β€”
Avalanche Energy Rated Yes (fully avalanche rated) β€”
Package PG-TO252-3 (DPAK) TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant (Pb-free)
Lead-Free Finish Yes (Pb-free) β€”
Transistor Polarity β€” P-Channel
Continuous Drain Current (ID) β€” -6.6 A (Tc)
Gate-Source Voltage (VGS) β€” Β±20 V
On-Resistance (RDS(on)) β€” 480 mOhm max @ VGS = -10 V
Gate Charge (Qg) β€” 18 nC (typ)
Power Dissipation (PD) β€” 40 W (Tc)
Operating Temperature Range β€” -55C to +150C (Tj)
Pin Count β€” 3 (Gate, Drain, Source)
MSL Level β€” 1
Lead-Free β€” Yes

Datasheets & Resources

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