IRFR2905ZTRPBF vs IRFB3207ZPBF Vergleich

Detaillierter Direktvergleich von IRFR2905ZTRPBF von Infineon und IRFB3207ZPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRFR2905ZTRPBF IRFB3207ZPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,52 $1,62
FET Type N-Channel —
Technology HEXFET (IR MOSFET, trench) N-Channel MOSFET (HEXFET, Z-suffix ruggedized)
Drain-Source Voltage (VDS) 55 V 75 V
Continuous Drain Current (ID) at Tc=25C 59 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) max @ VGS=10V 14.5 mΩ 4.1 mOhm
Gate Threshold Voltage VGS(th) 2.0 V to 4.0 V [DATA_NEEDED: typical VGS(th)]
Total Gate Charge (Qg) 29 nC (typical) —
Maximum Power Dissition (PD) at Tc=25C 110 W —
Betriebs-Sperrschichttemperatur -55 °C to +175 °C -55 C to +175 C
Gehäuse TO-252AA (DPAK), 3-pin (2+Tab), surface mount TO-220AB (3-lead through-hole)
Montageart Surface Mount Through Hole
Avalanche Rated Yes (improved repetitive avalanche rating) Yes (improved Z-variant ruggedness)
RoHS-Status Compliant —
MSL-Level 1 N/A (through-hole)
Tape and Reel Yes (TR suffix in MPN) —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRFB3207ZPBF
Series — HEXFET
Continuous Drain Current (ID) at TC=25C — 120 A
Silicon-Limited Drain Current — 170 A
On-Resistance RDS(on) typ @ VGS=10V — 3.3 mOhm
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C — 300 W
Lead-Free / RoHS — Yes (PBF suffix = lead-free)

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern