IRFR2905ZTRPBF vs IRFB3207ZPBF Comparaison
Comparaison détaillée côte à côte de IRFR2905ZTRPBF par Infineon et IRFB3207ZPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRFR2905ZTRPBF | IRFB3207ZPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,52 | $1,62 |
| FET Type | N-Channel | — |
| Technology | HEXFET (IR MOSFET, trench) | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Drain-Source Voltage (VDS) | 55 V | 75 V |
| Continuous Drain Current (ID) at Tc=25C | 59 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max @ VGS=10V | 14.5 mΩ | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | 2.0 V to 4.0 V | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge (Qg) | 29 nC (typical) | — |
| Maximum Power Dissition (PD) at Tc=25C | 110 W | — |
| Température de jonction en fonctionnement | -55 °C to +175 °C | -55 C to +175 C |
| Boîtier | TO-252AA (DPAK), 3-pin (2+Tab), surface mount | TO-220AB (3-lead through-hole) |
| Type de montage | Surface Mount | Through Hole |
| Avalanche Rated | Yes (improved repetitive avalanche rating) | Yes (improved Z-variant ruggedness) |
| Statut RoHS | Compliant | — |
| Niveau MSL | 1 | N/A (through-hole) |
| Tape and Reel | Yes (TR suffix in MPN) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRFB3207ZPBF |
| Series | — | HEXFET |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| Silicon-Limited Drain Current | — | 170 A |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |