IRFR2905ZTRPBF vs IRFB3207ZPBF 比較
詳細な並列比較: IRFR2905ZTRPBF メーカー: Infineon および IRFB3207ZPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRFR2905ZTRPBF | IRFB3207ZPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.52 | $1.62 |
| FET Type | N-Channel | — |
| Technology | HEXFET (IR MOSFET, trench) | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Drain-Source Voltage (VDS) | 55 V | 75 V |
| Continuous Drain Current (ID) at Tc=25C | 59 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max @ VGS=10V | 14.5 mΩ | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | 2.0 V to 4.0 V | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge (Qg) | 29 nC (typical) | — |
| Maximum Power Dissition (PD) at Tc=25C | 110 W | — |
| 動作接合温度 | -55 °C to +175 °C | -55 C to +175 C |
| パッケージ | TO-252AA (DPAK), 3-pin (2+Tab), surface mount | TO-220AB (3-lead through-hole) |
| 実装タイプ | Surface Mount | Through Hole |
| Avalanche Rated | Yes (improved repetitive avalanche rating) | Yes (improved Z-variant ruggedness) |
| RoHS ステータス | Compliant | — |
| MSLレベル | 1 | N/A (through-hole) |
| Tape and Reel | Yes (TR suffix in MPN) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRFB3207ZPBF |
| Series | — | HEXFET |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| Silicon-Limited Drain Current | — | 170 A |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |