IRFR2905ZTRPBF vs IRFB3207ZPBF Comparación
Comparación detallada lado a lado de IRFR2905ZTRPBF por Infineon y IRFB3207ZPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFR2905ZTRPBF | IRFB3207ZPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,52 | $1,62 |
| FET Type | N-Channel | — |
| Technology | HEXFET (IR MOSFET, trench) | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Drain-Source Voltage (VDS) | 55 V | 75 V |
| Continuous Drain Current (ID) at Tc=25C | 59 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max @ VGS=10V | 14.5 mΩ | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | 2.0 V to 4.0 V | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge (Qg) | 29 nC (typical) | — |
| Maximum Power Dissition (PD) at Tc=25C | 110 W | — |
| Temperatura de unión de funcionamiento | -55 °C to +175 °C | -55 C to +175 C |
| Encapsulado | TO-252AA (DPAK), 3-pin (2+Tab), surface mount | TO-220AB (3-lead through-hole) |
| Tipo de montaje | Surface Mount | Through Hole |
| Avalanche Rated | Yes (improved repetitive avalanche rating) | Yes (improved Z-variant ruggedness) |
| Estado RoHS | Compliant | — |
| Nivel MSL | 1 | N/A (through-hole) |
| Tape and Reel | Yes (TR suffix in MPN) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRFB3207ZPBF |
| Series | — | HEXFET |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| Silicon-Limited Drain Current | — | 170 A |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |