IRFR2905ZTRPBF vs IRFB3207ZPBF Comparison

Detailed side-by-side comparison of IRFR2905ZTRPBF by Infineon and IRFB3207ZPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFR2905ZTRPBF IRFB3207ZPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.52 $1.62
FET Type N-Channel β€”
Technology HEXFET (IR MOSFET, trench) N-Channel MOSFET (HEXFET, Z-suffix ruggedized)
Drain-Source Voltage (VDS) 55 V 75 V
Continuous Drain Current (ID) at Tc=25C 59 A β€”
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) max @ VGS=10V 14.5 mΞ© 4.1 mOhm
Gate Threshold Voltage VGS(th) 2.0 V to 4.0 V [DATA_NEEDED: typical VGS(th)]
Total Gate Charge (Qg) 29 nC (typical) β€”
Maximum Power Dissition (PD) at Tc=25C 110 W β€”
Operating Junction Temperature -55 Β°C to +175 Β°C -55 C to +175 C
Package TO-252AA (DPAK), 3-pin (2+Tab), surface mount TO-220AB (3-lead through-hole)
Mounting Type Surface Mount Through Hole
Avalanche Rated Yes (improved repetitive avalanche rating) Yes (improved Z-variant ruggedness)
RoHS Status Compliant β€”
MSL Level 1 N/A (through-hole)
Tape and Reel Yes (TR suffix in MPN) β€”
Manufacturer β€” Infineon Technologies (formerly International Rectifier)
Part Number β€” IRFB3207ZPBF
Series β€” HEXFET
Continuous Drain Current (ID) at TC=25C β€” 120 A
Silicon-Limited Drain Current β€” 170 A
On-Resistance RDS(on) typ @ VGS=10V β€” 3.3 mOhm
Total Gate Charge Qg β€” [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C β€” 300 W
Lead-Free / RoHS β€” Yes (PBF suffix = lead-free)

Datasheets & Resources

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